MMBTA70LT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMBTA70LT1G, a semiconductor device, is a single bipolar type transistor and is classified under the transistors – bipolar (BJT) – single category. It is a low power NPN transistor, produced by ON Semiconductor, usually used for general purpose switching and amplification applications.

A bipolar transistor is designed around an ‘NPN’ or ‘PNP’ structure, depending on its use. An NPN transistor consists of three layers: the emitter (E), the collector (C), and the base (B). Electrons flow from the emitter (E) to the collector (C) when current passes through the base (B) junction. On the other hand, a PNP transistor, which is the opposite of NPN, contains three layers: the emitter (E), the collector (C), and the base (B). In a PNP transistor, current flows from the collector (C) to the emitter (E) due to the presence of a small current flow from the base (B) junction.

NPN transistors, such as the MMBTA70LT1G, can be used in amplification and switching applications, both linear and digital. In linear amplification applications, the transistor is used to provide an accurate current gain or voltage gain, or to provide a stable, low-noise output signal. In switching applications, the transistor is used to switch high voltages, currents, or power levels – either digital or analog. In both respects, this transistor is well suited to the job since it contains three terminals: the base, collector and emitter. The base control the current flow between the collector and emitter.

The MMBTA70LT1G is especially designed for low-power applications, such as low-noise amplifiers, audio amplifiers, switching circuits and general-purpose transistor amplifiers. It is a low-power NPN transistor that offers a wide range of features, making it one of the most reliable transistors available on the market today. It has a total power dissipated at 25°C of 0.03W, a collector-emitter saturation voltage of 0.4V, a maximum collector-base voltage of 30V and a maximum collector current of 500mA.

As far as the working principle of the MMBTA70LT1G goes, the transistor acts as a switch – it’s normally off when no voltage is applied to the base and turns on when a small amount of current is passed between the base and the emitter. This small amount of current causes the transistor to become saturated, meaning that the voltage between the collector and the emitter (VCE) is reduced to almost zero. When the transistor is saturated, the current passes freely through the collector and emitter, and this current is known as the collector current (Ic).

In conclusion, the MMBTA70LT1G transistor can be used in a wide range of applications. It’s especially designed for low-power applications, like low-noise amplifiers, audio amplifiers, switching circuits and general-purpose transistor amplifiers. The working principle behind the transistor is relatively simple: it turns on when a small amount of current is passed between the base and the emitter, allowing the current to pass freely through the collector and emitter.

The specific data is subject to PDF, and the above content is for reference