BDW93C-S Allicdata Electronics
Allicdata Part #:

BDW93C-S-ND

Manufacturer Part#:

BDW93C-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN DARL 100V 12A TO22
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 12A...
DataSheet: BDW93C-S datasheetBDW93C-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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The BDW93C-S is a highly versatile type of bipolar junction transistor that is commonly used in digital filters and current source applications. It is a PNP device with a wide range of frequencies and current ratings. It has excellent characteristics that make it suitable for use in a wide range of applications such as digital filters, current source, cascode, and complex switching devices.

The BDW93C-S is a NPN transistor that is designed to allow a high gain and low noise in order to make it suitable for use in a wide range of communication applications. It has a low saturation voltage and has a good high frequency performance. This makes it suitable for applications where rapid switching needs to be achieved. The BDW93C-S also has a small size that makes it ideal for use in a wide range of integrated circuits.

The BDW93C-S is typically used in digital filters as it has a wide range of frequencies and current ratings. It also has a high gain and low noise, which makes it suitable for use in applications where rapid switching is required. The device is also suitable for use in current source applications due to its excellent characteristics. It has a small size and can be used in complex switching devices.

The working principle of the BDW93C-S is based on the current-voltage relationship of a field-effect transistor (FET). The FET characteristics are determined by the type of semiconductor material used in the three regions of the device, namely the source, gate and drain. The FET can be thought of as a voltage-controlled capacitive resistor with current controlled by the gate voltage. When a voltage is applied to the gate of a FET, it controls the current flow from the source and to the drain. This type of transistor can act as a current-controlled resistor, a voltage-controlled resistor, or a variable resistor depending on the parameters of a certain application.

In terms of application field, BDW93C-S transistors can be used in a myriad of digital applications due to its excellent characteristics and relatively small form factor. It can be found in a wide range of digital filters, current source and cascode applications, as well as being used in complex switching digital circuits. It is also commonly used in power supply circuits and signal processing circuits.

The BDW93C-S is a highly versatile transistor that is used in many digital devices and applications. Its excellent characteristics and small size makes it an ideal choice of transistor for use in digital filters, current source and cascode applications. Additionally, its high gain and low noise make it ideal for use in rapid switching applications. The device is also easy to use and its current-voltage relationship makes it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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