BC847AT,115 Allicdata Electronics

BC847AT,115 Discrete Semiconductor Products

Allicdata Part #:

568-11092-2-ND

Manufacturer Part#:

BC847AT,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 45V 0.1A SOT416
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150m...
DataSheet: BC847AT,115 datasheetBC847AT,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
Base Part Number: BC847
Description

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The BC847AT,115 is a single bipolar junction transistor (BJT), designed for switching, amplifying and other general-purpose applications. This particular device is manufactured by NXP Semiconductors, who describes the scope of usage of this product as “low noise amplifiers, switching, sound projection in TV receivers, inductive transducer amplifiers, wideband amplifiers, small signal amplification and local oscillators.”

The BC847AT,115 is a PNP type transistor, and has a maximum collector current of 100mA, with a collector-emitter voltage of 40V and a collector-base voltage of 65V. These specifications make it suitable for usage in small-signal, low noise applications. It also has a hFE range of 120-400, which allows for good gain performance.

The BC847AT,115 has a typical current gain (hFE) value of 250. This reliably provides a gain of 250 for every unit of current that flows through the collector. Typically, the hFE value remains constant over a wide range of current and voltage variations. However, it is important to note that the hFE value can vary depending on the lot and manufacturer, so testing is necessary to determine the actual value.

The BC847AT,115 has a low supply voltage of 5V, making it an ideal choice for applications that require small power supplies. It is also quite low cost, with prices typically being less than $0.50 per piece. The low cost and small size of this device make it well suited for high-volume applications.

The BC847AT,115\'s operating principles are based on a three-layer semiconductor structure that separates the emitter, collector, and base. The emitter is formed from P-type semiconductor material while the collector is made from N-type material with the base being of the same type as the emitter. A small current flows from the base to the collector, enabling current flow from the emitter to the collector.

When the base-emitter voltage is increased, more electrons are injected into the base and more current is allowed to flow from the emitter to the collector. This is called the forward-biased state. When the voltage is reversed, the current flow is inhibited, which is known as the reverse-biased state. By manipulating this process, a transistor can be used to amplify signals, create logic gates, and help drive electrical loads.

The BC847AT,115 can be used in a variety of applications. It is commonly used to amplify low-frequency signals, such as audio or radio, as well as in logic circuits. The small size and low cost make it ideal for high-volume applications or where space and power consumption are a concern. The device also serves as an efficient switch in applications such as controlling relays, motors, and other load devices.

In summary, the BC847AT,115 is a single bipolar junction transistor (BJT) suitable for small-signal, low noise and general-purpose applications. It has a maximum collector current of 100mA, with a collector-emitter voltage of 40V, a collector-base voltage of 65V, and a typical hFE of 250. This transistor is also low cost, low voltage and small in size, making it well suited for high-volume applications. The device works on the principle of manipulating minority carrier transport between a P-type and an N-type semiconductor junction to control current flow.

The specific data is subject to PDF, and the above content is for reference

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