Allicdata Part #: | 1086-16100-ND |
Manufacturer Part#: |
JANTXV2N3439U4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 350V 1A UA |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | JANTXV2N3439U4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Active |
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Bipolar junction transistors, or BJTs, are a type of transistor that can be used for many applications. The JANTXV2N3439U4 is one such BJT and is a single transistor device. It is designed for high voltage, high-power applications and is available from several suppliers.
The JANTXV2N3439U4 is a N-channel Enhancement-Mode Field-Effect Transistor. It has a maximum voltage rating of 8500 V and a maximum drain current rating of 4A. It also has an operating temperature range of 55 to 125 degrees Celsius. The device is available in 3-pin TO-220, 4-pin TO-247 and 4-pin D-Pak packages.
This transistor can be used in a variety of applications, including high voltage amplification, switching, and power switching. It is often used in consumer appliances, industrial equipment, and audio equipment. It can also be used for heaters, resistive loads, motors, relays, and more. The device is rated for a load rating of up to 200W.
The JANTXV2N3439U4 works on the principle of two identical P-N semiconductor junctions, one on each side of the transistor. When a DC voltage is applied to the gate, it modulates the current flowing through the body and creates a controlled current and voltage path between the source and drain. This is referred to as bipolar junction transistor operation.
The JANTXV2N3439U4 is the perfect choice for high voltage applications with high current and power ratings. It has been designed to be robust, reliable and easy to use. The device is available in multiple package options and has an extended temperature range. The device is also very cost-efficient and can be found at competitive prices from several suppliers.
In conclusion, the JANTXV2N3439U4 is a N-channel enhancement-mode field-effect transistor that is perfect for high voltage, high-power applications. It works on the principle of two identical P-N semiconductor junctions and has a MOSFET operational mode when the gate voltage is applied. It is available in multiple package options and offers maximum voltage ratings of 8500 V and drain current ratings of 4A. This device is robust, reliable, cost-efficient and easy to use, making it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6106AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 14.5V B SQ... |
JANTX1N6107 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JANTX1N6107A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JANTX1N6107AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V B SQ... |
JANTX1N6107US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V B S... |
JANTX1N6108 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
JANTX1N6108A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V AXIA... |
JANTX1N6108AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V B SQ... |
JANTX1N6108US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V B S... |
JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
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