BSH114,215 Allicdata Electronics

BSH114,215 Discrete Semiconductor Products

Allicdata Part #:

1727-6214-2-ND

Manufacturer Part#:

BSH114,215

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 500MA SOT23
More Detail: N-Channel 100V 500mA (Ta) 360mW (Ta), 830mW (Tc) S...
DataSheet: BSH114,215 datasheetBSH114,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08966
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V
FET Feature: --
Power Dissipation (Max): 360mW (Ta), 830mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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BSH114,215 is a type of field effect transistor (FET), also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It belongs to a family of single-gate FET devices and is a p-channel enhancement-mode FET with an internal gate protection diode. The particular feature of BSH114,215 is its low noise figure and the production of low EMI.

The working principle of a MOSFET is based on its electrical field effect. The gate-source voltage (VGS) induces an electric field that penetrates the channel from the gate to the source. This field modulates the width of the channel and its associated resistance, thereby controlling the flow of current between the drain and the source. The gate-source voltage must exceed a critical threshold before the field is strong enough to modulate the channel.

BSH114,215 is mainly used in analog applications such as amplifiers, power supplies and voltage regulators. Its low-noise figure makes it a preferred choice for high-end audio and video equipment. Its low-noise design ensures low-background interference in video signals and provides a clean audio signal. In addition, BSH114,215 has a good immunity to electrostatic discharges, making it suitable for consumer electronics.

BSH114,215 is widely used in consumer and automotive electronics, computers, power supplies, communications and medical equipment. It can be used for switching and amplification, providing low-power solutions. Additionally, its wide range of on resistance, low power consumption and fast switching speed give it an edge over other FET devices. In circuits where EMI needs to be minimized, the design of a BSH114,215-based circuit can be optimized to reduce switching times and hence reduce radiated EMI.

BSH114,215 is a versatile FET device with many uses in analog, digital and power applications. Its stable and reliable operation, low-noise performance and low EMI make it a preferred choice for many applications. It can be used for switching and amplification, and its low-power consumption is ideal for battery-powered applications. Furthermore, its wide range of on resistance and fast switching speed make it a suitable choice for a variety of applications in consumer, automotive and industrial electronics.

The specific data is subject to PDF, and the above content is for reference

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