Allicdata Part #: | PN100_G-ND |
Manufacturer Part#: |
PN100_G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | INTEGRATED CIRCUIT |
More Detail: | Bipolar (BJT) Transistor NPN 45V 500mA 250MHz 625m... |
DataSheet: | PN100_G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 20mA, 200mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PN100 |
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The PN100_G is a type of single bipolar junction transistor (BJT). This article will discuss the application fields and working principle of the PN100_G.
Bipolar junction transistors, also known as BJT\'s, are three-terminal devices that use both electron and hole charge carriers. The charge carriers allow for controlling current flow between the collector and emitter terminals, determined by the current going though the base terminal. The PN100_G is classified as a single BJT, meaning it consists of one p-n junction.
The PN100_G is primarily used in applications that rely on amplifying and switching signals. This can include amplifiers, oscillators, and fan controllers, for example. It can also be used in power management periphery, such as battery chargers, LED flashlights, and motor controllers.
When a voltage is applied to the base terminal, a current of electrons or holes is ‘injected’ into the base region at the p-n junction, also known as the base-emitter region. This creates a larger current between the collector and emitter, which controls the larger current between the collector and emitter. It acts like a current valve, regulating the current between the collector and emitter.
The amount of current controlled between the collector and emitter is proportional to the current injected into the base-emitter region, which is proportional to the voltage applied at the base terminal. This is known as a transistor\'s gain and can range from 10 to 1000 for the PN100_G.
The PN100_G can handle large voltage and power, as well as frequencies of up to 10MHz. It has a low noise figure and an operating temperature range of -55 to +125C. The PN100_G can also provide protection from over-current, over-voltage, and thermal runaway, making it an ideal choice for applications that need reliable, robust performance.
In conclusion, the PN100_G is a single bipolar junction transistor which is used in applications that require amplifying and switching signals. Its wide range of features make it suitable for a variety of different applications, such as amplifiers, oscillators, battery chargers, etc. Its gain can range from 10 to 1000 and it can handle high voltage and power, as well as frequencies of up to 10MHz. All of these factors make the PN100_G an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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