BCX56-10 TR Allicdata Electronics
Allicdata Part #:

BCX56-10TR-ND

Manufacturer Part#:

BCX56-10 TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANSISTOR NPN SOT89
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 130MHz 1.3W Su...
DataSheet: BCX56-10 TR datasheetBCX56-10 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.3W
Frequency - Transition: 130MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Description

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BCX56-10 TR is a type of single bipolar transistor (BJT) that is built with an NPN structure. It is usually used as a digital switch in electronic devices such as digital clocks, toys, and home appliances. The main application of this type of transistor is for switching operations in digital devices. Other applications for this transistor include amplification circuits, level shifters, and linear power switching. The BCX56-10 TR is characterized by its low current operation and low saturation voltage.

The structure of the BCX56-10 TR consists of three sections: Collector, Base, and Emitter. The Collector forms the positive voltage terminal while the Emitter forms the negative voltage terminal. The Base is the bridge between the Collector and the Emitter, allowing current to flow between them. The current supplied to the Base is the activating current, allowing the current flow between the Collector and the Emitter.

The working principle behind the BCX56-10 TR is based on the transistor’s junction properties. When a voltage is applied to the Base, it creates an electric field across the base/collector and base/emitter junctions. This electric field causes the electrons in the collector to be attracted towards the base and the holes in the base to be attracted towards the collector. As a result, current is allowed to flow between the collector and the emitter and the transistor is now “on”.

For digital devices, the BCX56-10 TR can be used to control the flow of current by varying the voltage applied to the base. By increasing the voltage, the current flow between the collector and the emitter will increase. This is known as switching “on” the transistor, allowing current to flow through the circuit. By decreasing the voltage, the current flow between the collector and the emitter will decrease, effectively switching “off” the transistor.

For linear power switching, the BCX56-10 TR can be used to control the power output of a device. As the voltage applied to the base increases, the current through the collector/emitter junctions increases and the power output increases. Conversely, as the voltage applied to the base decreases, the current through the collector/emitter junctions decreases, reducing the power output.

The BCX56-10 TR also offers some advantages for use in level shifters and amplification circuits. These circuits require transistors that can be operated with low current and low saturation voltages. The BCX56-10 TR offers this combination of properties and can be used to control the level of signal in these circuits.

In conclusion, the BCX56-10 TR is a type of single bipolar transistor (BJT) that is well suited for digital switching applications. It is characterized by its low current operation and low saturation voltage and can be used in level shifters, linear power switching, and signal amplification applications.

The specific data is subject to PDF, and the above content is for reference

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