BCX56-16 TR Allicdata Electronics
Allicdata Part #:

BCX56-16TR-ND

Manufacturer Part#:

BCX56-16 TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANSISTOR NPN SOT89
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 130MHz 1.3W Su...
DataSheet: BCX56-16 TR datasheetBCX56-16 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.3W
Frequency - Transition: 130MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Description

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The BCX56-16 TR is a single bipolar junction transistor (BJT) typically used for applications involving amplification and switching. It is a customizable NPN transistor that is able to be used in a wide range of applications, from audio amplifiers to motor control circuits. The BCX56-16 TR offers a high breakdown voltage and current gain, making it an ideal choice for transistor applications.

The BCX56-16 TR is a three-layer, NPN semiconductor device commonly seen in many circuit applications. It is designed to operate with a wide range of supply voltages and currents, allowing for a broad range of applications. The main purpose of the transistor is to provide efficient current control, whereby a small input current can be used to control a much larger output current.

The transistor consists of three layers of semiconductor material doped with impurities to create an electron channel and provide current gain. On the base layer, an N-material is doped with an impurity, while on the emitter layer, a P-material is doped with an impurity. The collector layer is sandwiched between the emitter and base layers. The collecting layer typically consists of a P-type material doped with a heavier concentration of impurities than the emitter and base layers.

In the BCX56-16 TR, the base-emitter junction works as a diode, allowing the current to travel from the emitter to the base when a forward bias is applied. The N-material within the base layer is made up of a large amount of electrons, and as the current contacts the base-emitter junction, some electrons are injected into the P-material. This process is called injection. It is this injection process that provides the transistor with its current gain.

The BCX56-16 TR also offers an excellent breakdown voltage capability. This breakdown voltage is the amount of voltage that the transistor can withstand before breakdown occurs, which results in the transistor being destroyed. The BCX56-16 TR has a maximum breakdown voltage of 160V, allowing it to be used in circuits with high voltage requirements.

The BCX56-16 TR also offers large current gains. The current gain is the ratio of output current to input current. The transistor\'s current gain is determined by the amount of base current. The higher the amount of base current, the higher the current gain will be. The BCX56-16 TR has a current gain of up to 14 when using a 1mA base current.

The BCX56-16 TR can be used in a variety of applications, such as audio amplifiers, motor control circuits, and small amplifying circuits for many general-purpose use cases. It is also often used in applications where the noise or output impedance of a transistor is a key factor, such as in audio amplifiers or voltage regulators.

Overall, the BCX56-16 TR is an ideal choice for transistor applications involving amplification and switching. It offers a high breakdown voltage, large current gains, and wide supply voltage and current domains. It is also easy to integrate into circuits and is suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

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