Allicdata Part #: | IRL7472L1TRPBFTR-ND |
Manufacturer Part#: |
IRL7472L1TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 375A |
More Detail: | N-Channel 40V 375A (Tc) 3.8W (Ta), 341W (Tc) Surfa... |
DataSheet: | IRL7472L1TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | StrongIRFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 375A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.59 mOhm @ 195A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 20082pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 341W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DIRECTFET L8 |
Package / Case: | DirectFET™ Isometric L8 |
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The IRL7472L1TRPBF is a field-effect transistor (FET) designed as an enhancement-mode silicon-gate power field-effect transistor in a TO-220AB package. It is designed for low-voltage, high-current, fast switching applications. Its small size, low voltage and power consumption, and high efficiency make the IRL7472L1TRPBF an ideal choice for circuit designs that need fast and reliable switching of DC power. This transistor has an on-resistance (RDS) of less than 5mΩ, which makes it well-suited for use in switching regulators, DC-DC converters, and motor controllers.
The IRL7472L1TRPBF is a single N-channel MOSFET (metal-oxide semiconductor field-effect transistor). In N-channel MOSFETs, the channel is made of a thin layer of metal oxide and is formed between two electrodes, the source and the drain. The metal-oxide layer acts as an insulator, blocking all current from passing between the source and the drain, unless the gate voltage (Vgs) exceeds the threshold voltage (Vgs(th)), at which point the metal-oxide layer gets thin enough for current to start flowing through it. As the gate voltage is increased, the metal-oxide layer becomes thinner, allowing more current to pass through. This process is known as “enhancement-mode” because it requires an increase in the gate voltage to “enhance” the metal-oxide layer’s ability to allow current to pass through it.
The IRL7472L1TRPBF’s low on-resistance makes it ideal for applications that require low-voltage operation, high-current switching, and fast switching speeds. One major application of this transistor is in switching regulators, which are used to convert DC power from one voltage level to another. The IRL7472L1TRPBF is especially well-suited for such applications because of its low on-resistance, which reduces the amount of power lost in the form of heat during the switching process. Another application where the IRL7472L1TRPBF can be used is in DC-DC converters, which are used to convert a constant DC electrical signal into a variable DC electrical signal. Again, the low on-resistance of the IRL7472L1TRPBF makes it ideal for this application since it ensures that minimal power is lost during the conversion process.
The IRL7472L1TRPBF is also well-suited for use in motor controllers. A motor controller is a device that converts an electrical signal into a sequence of pulses that activate a motor’s coils, causing them to rotate at a speed determined by the frequency of the pulses. The IRL7472L1TRPBF’s low on-resistance allows for fast switching times, making it suitable for use in motor controllers that require high speeds. The IRL7472L1TRPBF also has a low gate capacitance, which further helps reduce the switching time, making it an ideal choice for motor controllers that require fast switching speeds.
In addition to the applications mentioned above, the IRL7472L1TRPBF can also be used for other high-current, low-voltage switching applications, including power amplifiers, power distribution circuits, LED drivers, level shifters, and logic device drivers. Its small size, low voltage and power consumption, and high efficiency make it an ideal choice for a wide variety of applications where fast and reliable DC power switching is required.
The specific data is subject to PDF, and the above content is for reference
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