Allicdata Part #: | FDPF085N10A-ND |
Manufacturer Part#: |
FDPF085N10A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 40A TO-220F |
More Detail: | N-Channel 100V 40A (Tc) 33.3W (Tc) Through Hole TO... |
DataSheet: | FDPF085N10A Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2695pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 33.3W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F-3 |
Package / Case: | TO-220-3 Full Pack |
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FDPF085N10A is a narrow body and low on-resistance N-channel enhancement-mode MOSFET with a voltage rating of 80V and drain-source current of 85A. It is composed of a metal oxide semiconductor (MOS) field-effect transistor that has an insulated gate. This field-effect transistor is capable of being operated at high voltage levels and at extremely low current levels due to its insulated gate. The FDPF085N10A is ideal for switching applications in electronic equipment such as computers, telecommunications, consumer products, and automotive applications due to its low operating voltage levels, low power consumption, and low on-resistance.
The FDPF085N10A is used in a variety of applications such as load switching and motor control. It is often used in dc-dc converters, motor control circuits, and power supply circuits. It is also used as a replacement for E-MOSFETs (Enhanced metal-oxide-semiconductor FET) in high power switch circuits. In addition, it can be used as a gate driver in metal oxide semiconductor-based VLSI devices and in 3-terminal bias circuits.
The working principle of the FDPF085N10A is relatively simple. When the gate voltage is below zero, the device is in its “off” state. This state allows no current flow between the source and the drain. When the gate voltage is increased above zero, the electrostatic attraction of the gate contact with the source causes a conduction path to be formed. This allows current to flow between the source and the drain.
The FDPF085N10A is popular due to its low on-resistance and low operating voltage levels. It has a very low threshold voltage of only 2.0V and an R DS-ON of only 12mohm, making it an ideal choice for applications that require low operational power levels and low variations in the voltage. The low gate-source and gate-drain capacitances of the FDPF085N10A make it suitable for high-speed switching applications as well.
The FDPF085N10A is also known for its excellent reliability. Its ESD (electrostatic discharge) protection has been characterized at up to 2kV, making it well suited for a wide range of automotive and consumer applications. The device is provided in a TO-220F package, which offers excellent heat dissipation and mechanical strength.
In conclusion, the FDPF085N10A is an ideal choice for applications in which low operating voltages and low on-resistance are required. It is known for its exceptional reliability and suitability for high-speed switching applications. This device can be used in a variety of applications, including load switching and motor control as well as dc-dc converters, power supply circuits, and 3-terminal bias circuits.
The specific data is subject to PDF, and the above content is for reference
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