DMP45H21DHE-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMP45H21DHE-13DITR-ND |
Manufacturer Part#: |
DMP45H21DHE-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFETP-CHAN 450V SOT223 |
More Detail: | P-Channel 450V 600mA (Tc) 12.5W (Tc) Surface Mount... |
DataSheet: | DMP45H21DHE-13 Datasheet/PDF |
Quantity: | 1000 |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1003pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 12.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 450V |
Current - Continuous Drain (Id) @ 25°C: | 600mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 21 Ohm @ 300mA, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.2nC @ 10V |
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The DMP45H21DHE-13 is a single N-channel 60V double-diffused MOSFET which is the latest generation of high-voltage high-speed power MOSFETs from Fairchild Semiconductor. It is an advanced MOSFET technology optimized to reduce switching losses and increase power efficiency while minimizing electrical noise and EMI interference in applications where high speed MOSFET switching is necessary. The device also features a low on-resistance (RDS(on)) and a low threshold voltage. The patented double-diffused technology used to manufacture the DMP45H21DHE-13 allows the power MOSFET to switch more efficiently with less power dissipated and improved thermal performance.
Application Fields:
The DMP45H21DHE-13 can be used in a wide range of applications, such as switch mode power supplies, motor control applications, digital switching, DC/DC converters, AC/DC converters, LED lighting, and other power switching applications. Due to its low RDS(on) and fast switching speeds, the DMP45H21DHE-13 is well-suited for portable devices and consumer applications.
Working Principle:
The DMP45H21DHE-13 is a MOSFET which stands for Metal-Oxide-Semiconductor Field-Effect Transistor which is the most commonly used type of transistor. It is a voltage-controlled device that uses three terminals, a source, gate, and drain. When a voltage is applied to the gate, an electric field is induced which creates a conducting channel between the source and drain. The DMP45H21DHE-13 is a double-diffused MOSFET which is an advanced MOSFET technology that utilizes a two-stage process to produce ultra-low on-state resistance and superior switching characteristics. This double diffusion process converts the N-channel MOSFET into an N+-channel MOSFET, dramatically reducing its on-state resistance and thus dissipates less power during switching. Since less power is dissipated, the device is cooler and has improved thermal performance.
The specific data is subject to PDF, and the above content is for reference
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