BZX55C33-TR Discrete Semiconductor Products |
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Allicdata Part #: | BZX55C33-TRGITR-ND |
Manufacturer Part#: |
BZX55C33-TR |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 33V 500MW DO35 |
More Detail: | Zener Diode 33V 500mW ±5% Through Hole DO-35 |
DataSheet: | BZX55C33-TR Datasheet/PDF |
Quantity: | 20000 |
10000 +: | $ 0.01720 |
30000 +: | $ 0.01548 |
50000 +: | $ 0.01376 |
100000 +: | $ 0.01290 |
250000 +: | $ 0.01147 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 24V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZX55C33-TR is a low current Zener diode and is part of Diodes – Zener – Single category. It is designed to provide voltage regulating qualities in a variety of applications. It is a type of Zener Diode which consist of a semiconductor junction with an anode and a cathode.
The BZX55C33-TR diode consists of 3 layers of Silicon P-N Junction. The P layer is doped with a P-type dopant and the N layer is doped with an N-type dopant. When the anode is connected to the positive terminal and the cathode is connected to the negative terminal, the diode is said to be forward biased. In this situation, the two layers of semiconductor junction act as a closed switch allowing the electrons to travel through and creating an electric current. On the other hand, when the anode is connected to the negative terminal and the cathode is connected to the positive terminal, the diode is said to be reverse biased. In this situation, the two layers of semiconductor junction act as an open switch preventing the electrons to travel through and stopping the electric current to flow, maintaining a constant voltage.
The BZX55C33-TR has a protective coating which prevents it from temperature and voltage fluctuations. Also, this protective coating ensures that the Zener diode does not become heat damaged due to the internal electric resistance. The BZX55C33-TR diode’s maximum working voltage is 33 volts and maximum power dissipation of 550 mW. Due to its low power dissipation, the BZX55C33-TR is suitable for low current applications.
The main application field of the BZX55C33-TR diode is voltage regulation. When the diode is connected to a circuit, it can be used to regulate the voltage of the circuit. This ensures that the voltage remains constant as the load on the circuit increases or decreases. This allows the circuit to maintain proper operation even in the event of a surge of power or sudden changes in the environment. It is also used in protection circuits to protect sensitive devices and components from voltage surges. Furthermore, BZX55C33-TR is used in signal conditioning applications and in the generation of waveshapes.
In sum, the BZX55C33-TR is part of the Diodes – Zener – Single category. It is a low-current Zener diode designed specifically to provide voltage regulation qualities in a variety of applications. It is composed of 3 layers of Silicon P-N junction and comes with a protective coating to prevent temperature and voltage fluctuations. The main application field of the BZX55C33-TR is voltage regulation and protection circuits, signal conditioning and wave-shaping.
The specific data is subject to PDF, and the above content is for reference
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