Allicdata Part #: | AON7380-ND |
Manufacturer Part#: |
AON7380 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH DFN 3X3 EP |
More Detail: | N-Channel 30V 24A (Tc) 4.1W (Ta), 24W (Tc) Surface... |
DataSheet: | AON7380 Datasheet/PDF |
Quantity: | 1000 |
Series: | AlphaMOS |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 825pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 4.1W (Ta), 24W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (3x3) |
Package / Case: | 8-VDFN Exposed Pad |
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The AON7380 MOSFET is a unique semiconductor device in that it offers the benefits of both a FET and a MOSFET in a single package. It contains two FETs and one MOSFET, and when combined in a single package, they offer the advantage of both a low voltage drop and high current handling capability. This makes them ideal for use in a variety of electronic applications, such as in power supplies, LED drivers, DC-DC converters, and high current switching applications.
The AON7380 MOSFET is a depletion-mode field-effect transistor (FET) that utilizes metal-oxide-semiconductor (MOS) technology. It is manufactured on a silicon-on-insulator substrate, and features two drain terminals and two source terminals, with a single gate. It is capable of handling currents up to 14 amps and maximum voltage ratings up to 20 volts. When connected to a positive gate voltage, the device will conduct between the drain and source terminals, allowing current to flow and creating a low resistance path between the two.
The AON7380 also features a unique self-body diode, which helps to protect the device while in operation. The self-body diode is created by the internal structure of the MOSFET and is always active, even without an applied gate voltage. This diode helps to prevent the device from suffering any damage that may be caused by external leakage or reversed-polarity electrical current.
The AON7380 MOSFET is widely used in various applications due to its high current handling capability, low voltage drop, and compact design. It can be used for switching applications, low-loss power stages, and even high-efficiency power-conversion applications. It is also often used in automotive applications, robotics and industrial applications.
The working principle of the AON7380 MOSFET is relatively simple. When a forward gate voltage is applied to the gate terminal, the depletion layer of the MOSFET is reduced and electrons are permitted to move from the source region to the drain region. This establishes a low resistance path between the drain and source terminals and allows current to flow. As these electrons move, they also cause a voltage drop across the channel between the source and drain terminals.
The AON7380 MOSFET is a versatile and powerful device, offering excellent performance and reliability in applications that require high current handling and low voltage drop. It is ideal for use in switching applications, power stages, and power conversion, as well as automotive and robotic applications.
The specific data is subject to PDF, and the above content is for reference
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