BSH121,135 Discrete Semiconductor Products

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The BSH121 and BSH135 are two advanced power MOSFETs from Infineon Technologies. Both of these MOSFETs are designed for use in power switching and conversion applications such as in power supplies, battery management, DC-DC converters, motor control, lighting and more. The BSH121 and BSH135 are hard-switched MOSFETs, meaning they are designed to be operated by pulse width modulation (PWM) signals. The key characteristics of these MOSFETs are:

• Low on-resistance: This is one of the most important characteristics of power MOSFETs, as it defines how much power can be switched without dissipating too much power. The BSH121 and BSH135 both have low RDS(on) values, meaning they can switch large currents without significant loss of efficiency.
• Low gate charge: The BSH121 and BSH135 have very low gate charges, meaning they require less energy to switch the MOSFET on and off.
• High frequency capability: The BSH121 and BSH135 are able to switch higher frequencies than traditional MOSFETs, allowing for faster and more efficient power switching.
• High temperature capability: The BSH121 and BSH135 are rated for operation at temperatures up to 175°C, making them well-suited for applications that require high thermal efficiency.

In addition to these key characteristics, the BSH121 and BSH135 feature a wide range of additional features that make them ideal for use in power applications. These features include:

• Voltage rating: 10V to 1000V
• MOSFET type: N or P channel
• Pulse Width Modulation (PWM) control
• Charge Pump Circuit (CPC): Allows the protection circuit to control the MOSFET’s gate voltage.
• Built-in body diode: Helps protect the MOSFET from inductive loads.
• Square Wave Driver: Allows the MOSFET to switch rapidly.
• Secondary P-channel MOSFET: Allows the MOSFET to be driven with a PWM signal.
• Pin-compatible packages: The BSH121 and BSH135 are available in identical packages, allowing for easy replacement.

The BSH121 and BSH135 are designed for use in a wide range of applications, from consumer electronics to automotive, industrial and communications. They are well suited for applications that require high efficiency and low power loss, such as power supplies, battery management, DC-DC converters, motor control, lighting and more.

These MOSFETs can be used in a variety of configurations, including: single-ended switched, dual-ended switched, bridge-tied load, and complementary push-pull configurations. In most cases, the MOSFETs are driven by an external circuit, such as an H-bridge driver. The MOSFETs can also be used in parallel, allowing for higher current and higher power applications.

The working principle of a MOSFET is fairly simple: when a voltage is applied to the gate, it will create an electric field that narrows the channel between the source and drain, allowing current to flow. The MOSFET is then turned “on” and off by controlling the gate voltage.

The BSH121 and BSH135 are designed for high efficiency and low power loss applications. Their low on-resistance, low gate charge, high frequency capability, and high temperature rating make them well suited for applications that require a combination of these features.

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