| Allicdata Part #: | IXTH14N100-ND |
| Manufacturer Part#: |
IXTH14N100 |
| Price: | $ 10.88 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 14A TO-247 |
| More Detail: | N-Channel 1000V 14A (Tc) 360W (Tc) Through Hole TO... |
| DataSheet: |  IXTH14N100 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 9.89163 |
| Series: | MegaMOS™ |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 1000V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 820 mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 195nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5650pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 360W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 (IXTH) |
| Package / Case: | TO-247-3 |
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The IXTH14N100 is a type of Field Effect Transistor (FET) that is a single Metal Oxide semiconductor FET. It is composed of several components including an insulated gate, source and drain electrodes, a substrate and an insulated gate dielectric layer. This device can be used in many applications where total gate current flow control is required and/or low noise signal amplification.
The IXTH14N100 allows electric current to travel at a lower voltage and in a higher resistance level. This FET has very low on-resistance and can operate at a very low operating temperature. It also has very low leakage current, low gate capacitance and rapid switching time.
The IXTH14N100 is able to operate with a number of different voltages such as 5V, 15V, and 30V. It can support power up to 500W. Other features of the IXTH14N100 include a higher purity gallium nitride (GaN) substrate, low junction capacitance, low input offset voltage and low noise figure.
The working principle of the IXTH14N100 is based on the principle of voltage and current control. When a gate voltage is applied to the device, a thin layer of gate oxide layer is formed between the gate, source and drain electrodes. The oxide layer acts as an insulator and creates a barrier between them, allowing only the desired current to pass through the device. The current is then controlled by the voltage applied to the device.
The IXTH14N100 is used in a wide range of applications, such as power and signal conditioning, switching and level shifting, radio frequency (RF) circuit design, and DC-DC converters. It can also be used in power supplies, audio amplifiers, low-frequency amplifiers, switchers and level shifters, automotive non-isolated DC-DC regulator and power management systems.
In conclusion, the IXTH14N100 is a single Metal Oxide semiconductor FET that can be used in many applications. Its working principle is based on the principle of voltage and current control. It has a number of excellent features such as low on-resistance, low junction capacitance and low input offset voltage. It is used in a variety of applications including power and signal conditioning, switching and level shifting, RF circuit design and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IXTH21N50 | IXYS | 7.13 $ | 192 | MOSFET N-CH 500V 21A TO-2... |
| IXTH02N250 | IXYS | 9.82 $ | 136 | MOSFET N-CH 2500V 0.2A TO... |
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| IXTH6N50D2 | IXYS | 5.03 $ | 69 | MOSFET N-CH 500V 6A TO247... |
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| IXTH48N65X2 | IXYS | -- | 127 | MOSFET N-CH 650V 48A TO-2... |
| IXTH30N60P | IXYS | 5.8 $ | 62 | MOSFET N-CH 600V 30A TO-2... |
| IXTH62N65X2 | IXYS | 6.7 $ | 54 | MOSFET N-CH 650V 62A TO-2... |
| IXTH88N30P | IXYS | 7.6 $ | 90 | MOSFET N-CH 300V 88A TO-2... |
| IXTH80N65X2 | IXYS | -- | 49 | MOSFET N-CH 650V 80A TO-2... |
| IXTH40N30 | IXYS | 9.0 $ | 26 | MOSFET N-CH 300V 40A TO-2... |
| IXTH67N10 | IXYS | 9.95 $ | 35 | MOSFET N-CH 100V 67A TO24... |
| IXTH75N10 | IXYS | -- | 43 | MOSFET N-CH 100V 75A TO24... |
| IXTH1N200P3HV | IXYS | 5.04 $ | 21 | MOSFET N-CH 2000V 1A TO-2... |
| IXTH1N200P3 | IXYS | 5.04 $ | 45 | MOSFET N-CH 2000V 1A TO-2... |
| IXTH15N50L2 | IXYS | -- | 65 | MOSFET N-CH 500V 15A TO-2... |
| IXTH24P20 | IXYS | -- | 6 | MOSFET P-CH 200V 24A TO-2... |
| IXTH16N20D2 | IXYS | 8.57 $ | 20 | MOSFET N-CH 200V 16A TO-2... |
| IXTH30N50L2 | IXYS | 9.03 $ | 23 | MOSFET N-CH 500V 30A TO-2... |
| IXTH64N65X | IXYS | 9.09 $ | 18 | MOSFET N-CH 650V 64A TO-2... |
| IXTH13N110 | IXYS | -- | 14 | MOSFET N-CH 1.1KV 13A TO-... |
| IXTH60N10 | IXYS | 15.69 $ | 1000 | MOSFET N-CH 100V 60A TO-2... |
| IXTH3N200P3HV | IXYS | 17.33 $ | 1000 | MOSFET N-CH 2000V 3A TO-2... |
| IXTH50P085 | IXYS | 0.0 $ | 1000 | MOSFET P-CH 85V 50A TO-24... |
| IXTH150N17T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 175V 150A TO-... |
| IXTH12N120 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1200V 12A TO-... |
| IXTH152N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 152A TO-2... |
| IXTH160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
| IXTH180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-2... |
| IXTH182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-2... |
| IXTH200N075T | IXYS | -- | 1000 | MOSFET N-CH 75V 200A TO-2... |
| IXTH200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-2... |
| IXTH220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-2... |
| IXTH220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-2... |
| IXTH230N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 230A TO-2... |
| IXTH240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
| IXTH250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-2... |
| IXTH280N055T | IXYS | -- | 1000 | MOSFET N-CH 55V 280A TO-2... |
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