APT26F120B2 Allicdata Electronics
Allicdata Part #:

APT26F120B2-ND

Manufacturer Part#:

APT26F120B2

Price: $ 18.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1200V 27A T-MAX
More Detail: N-Channel 1200V 27A (Tc) 1135W (Tc) Through Hole T...
DataSheet: APT26F120B2 datasheetAPT26F120B2 Datasheet/PDF
Quantity: 1000
30 +: $ 16.55790
Stock 1000Can Ship Immediately
$ 18.21
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
FET Feature: --
Power Dissipation (Max): 1135W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™
Package / Case: TO-247-3 Variant
Description

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APT26F120B2 is a single-ended field effect transistor produced by Advanced Power Technology Corporation. It is a FET-MOSFET (field-effect transistor-metal-oxide-semiconductor field-effect transistor) device used in a wide range of applications.

The APT26F120B2 is an N-type field effect transistor, with a drain-source voltage of 120V, a maximum drain current of 10A, and a maximum gate source voltage of 20V. It has an insulated gate to improve performance, thus providing a high switching speed, high power density, and extremely low on-resistance. This device is designed for use in high-current applications, such as power conversion, DC-DC converters, and high speed switching applications.

The working principle of the APT26F120B2 is that, when the gate voltage is increased, the current through the channel is increased, and the voltage drop across the device is lowered. As the voltage drop is decreased, the device resistance is also decreased, which increases the current carrying capacity of the device. Conversely, when the gate voltage is decreased, the current through the channel is decreased, and the voltage drop is increased. This increases the device resistance and decreases the current carrying capacity of the device.

The APT26F120B2 Field Effect Transistor is a versatile device that has been used in a wide range of applications. One example is in power conversion, in which it is used as a switching device to control the flow of power from a source to a load. It is also used in DC-DC converters, where it is used to control the voltage and current levels of the output signal. This device is also used in motor control applications, such as in electric motors and BLDC (brushless DC) motors.

The APT26F120B2 field effect transistor is also used in high-speed switching applications. It is used as a switching device to control the flow of signals between digital circuitry, a microcontroller, and other circuits. It is also used in analog signal processing and transmission, where it is used to control the transmission and receptions of analog signals. In audio and video applications, the APT26F120B2 is used to control the amplification and filtration of analog audio signals and the transmission and adjustment of digital video signals.

The APT26F120B2 is a powerful and versatile device that offers numerous advantages for a variety of electronic design applications. It is well suited for high-current applications, due to its high power density and low-on resistance. It also provides high switching speed and excellent reliability, making it ideal for use in high speed switching applications. Furthermore, its insulated gate and low gate-source voltage provide excellent noise immunity and improved performance.

The specific data is subject to PDF, and the above content is for reference

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