BSH112,235

Series:	TrenchMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	40pF @ 10V
FET Feature:	--
Power Dissipation (Max):	830mW (Tc)
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-236AB (SOT23)
Package / Case:	TO-236-3, SC-59, SOT-23-3

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BSH112,235 Application Field and Working Principle

Transistors are a type of electronic device that can either amplify or switch electrical signals and power. Field-effect transistors (FETs) are a type of transistor that utilizes an electric field to control current passing through the device. Metal-oxide-semiconductor field-effect transistors (MOSFETs) are one type of FET and are the most widely used FET. BSH112,235 is one type of MOSFET. In this article, we will discuss the application field and working principle of BSH112,235.

Application Field of BSH112,235

BSH112,235 is a small signal low voltage N-channel enhancement mode MOSFET. It can be used in applications such as switching, amplifier stages, sampling and pulse-width modulation circuits. BSH112,235 has a low gate threshold voltage, making it ideal for such applications. The device can be used in a variety of circuits and is suitable for operation in low voltage circuits up to 8V. This makes it an attractive choice for many applications.

Working Principle of BSH112,235

BSH112,235 is a N-channel enhancement mode MOSFET, which means that current will flow through the device if there is a voltage difference between the drain and source. When the gate-source voltage, or Vgs, is less than the threshold voltage, Vth, the MOSFET will block current from flowing through. When the Vgs is greater than Vth, electrons from the channel are attracted to the gate, allowing current to flow. BSH112,235 has a low Vth of 0.8V, which means that the device will easily switch on when the gate-source voltage is even slightly greater than 0.8V.

Conclusion

In conclusion, BSH112,235 is a small signal low voltage N-channel enhancement mode MOSFET that is suitable for use in applications such as switching, amplifier stages, sampling and pulse-width modulation circuits. The device is most efficient with a gate-source voltage greater than 0.8V and is suitable for use in low voltage circuits up to 8V.

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