TPCA8016-H(TE12LQM Allicdata Electronics
Allicdata Part #:

TPCA8016HTE12LQMDKR-ND

Manufacturer Part#:

TPCA8016-H(TE12LQM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 60V 25A 8-SOPA
More Detail: N-Channel 60V 25A (Ta) 1.6W (Ta), 45W (Tc) Surface...
DataSheet: TPCA8016-H(TE12LQM datasheetTPCA8016-H(TE12LQM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Digi-Reel® 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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The TPCA8016-H TE12LQM is a type of N-channel power MOSFET, which can be used in a variety of applications. This device is a single transistor with a rating of 12V and 16A making it a great choice for many applications. The TE12LQM can be used for the switching of high power in a reliable, efficient and low power consumption design. The N-channel device features an enhanced gate threshold voltage, an improved current rating and a higher temperature rating.

The TPCA8016-H is a popular choice as an efficient switch for controlling high current in various applications. For example, it can be used to drive large loads such as motor control circuits, switching power supplies, and other power electronic devices. Moreover, this device can be used to control the speed of DC motors by controlling their speed directly or with pulse width modulation (PWM). It can also be used in solenoid and relay circuits and is ideal for switching complex circuits at higher frequencies.

The TE12LQM device has a wide range of benefits compared to other types of MOSFETs. It is designed with an increased dielectric strength, which means that it can handle large power loads while staying cool. This is further enhanced by its low on resistance which ensures its ability to handle a higher current load without additional power consumption. Additionally, the TE12LQM is constructed with a gate oxide protection which improves its reliability and lifetime. As such, it is a great choice for applications where high power needs to be safely and reliably switched without significant losses.

In terms of its working principle, the TPCA8016-H draws current from the drain to the source when a voltage is applied to the gate. This is known as a ‘depletion-mode’ MOSFET. When no voltage is applied to the gate, the transistor will remain in a non-conductive state and no current will flow. This is known as an ‘enhancement-mode’ MOSFET. The voltage applied to the gate determines the amount of current that can be drawn from the drain to the source.

The TE12LQM is also designed with robustness, in terms of both power handling and temperature. It has a maximum junction temperature rating of 175°C and an operating temperature range of -55°C to 150°C. Furthermore, it has an extremely low on resistance, excellent thermal transfer characteristics and low thermal resistance. As such, it can work reliably for a long time without suffering from thermal overload.

Overall, the TPCA8016-H TE12LQM is an ideal choice for various applications due to its increased gate threshold voltage, improved current rating, increased dielectric strength, improved reliability and reduced power losses. This device is able to handle large power loads while consuming a low amount of power and is perfect for switching complex circuits at higher frequencies. Its wide range of benefits makes it a great choice for power electronic and motor control designs.

The specific data is subject to PDF, and the above content is for reference

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