| Allicdata Part #: | IRFS52N15DPBF-ND |
| Manufacturer Part#: |
IRFS52N15DPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 51A D2PAK |
| More Detail: | N-Channel 150V 51A (Tc) 3.8W (Ta), 230W (Tc) Surfa... |
| DataSheet: |  IRFS52N15DPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | HEXFET® |
| Packaging: | Tube |
| Part Status: | Discontinued at Digi-Key |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150V |
| Current - Continuous Drain (Id) @ 25°C: | 51A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 32 mOhm @ 36A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 89nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2770pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 3.8W (Ta), 230W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
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IRFS52N15DPBF is an advanced insulated-gate field-effect transistor (IGFET) manufactured by IR which has wide global applications in power-handling and power management circuits. This device has a single-N-channel switching element that uses depletion-mode SO-8 (D2PAK) power packages. It has an on-resistance of 49.9 mΩ and a maximum drain current of 15 A. The IRFS52N15DPBF device is a medium power-level MOSFET that is suitable for use in insulated-gate power switching circuits. Because of its design and construction, it can provide reliable and efficient power control with low power losses, excellent operating temperature range and low gate gate-threshold voltage. The IRFS52N15DPBF device has a drain-source voltage rating of 500 V and can deliver a maximum drain-source current of 15 A continuous. It has a specified on-resistance of 40 mΩ at a drain-source voltage of 10 V, and a gate-includes voltage of 7 V. The IRFS52N15DPBF device is designed to control the current flow in an IG power switching circuit at low, medium, and high power levels. It has a low input capacitance and low gate-threshold voltage, allowing the device to switch quickly. Additionally, it has a relatively large package size that accommodates the large drain-source contact area necessary to reduce the power losses associated with power switching applications. Working PrincipleIGFETs work on the principle of using an electrical voltage to induce a current flow between two terminals which are insulated from each other. In this case, the two terminals are the gate and drain and the method of controlling the current flow is known as "gate control". When a voltage is applied to the gate, it creates an electric field that attracts electrons from the drain to the gate and produces a conductive layer between the gate and drain. This is known as the "inversion layer" and the current is known as the "electron flow". The greater the voltage applied to the gate, the larger the inversion layer and the larger the electron flow. In addition, the IGFET also has a "body-diode", which is a short-circuit between the source and drain. When no gate voltage is applied, the body-diode conducts current flow from the drain to the source. However, the current flow is limited by the on-resistance of the IGFET, which is typically small. The IRFS52N15DPBF device has an on-resistance of 49.9 mΩ, making it ideal for many power switching applications. It also has a low gate-threshold voltage, allowing it to switch quickly. Additionally, it has a large package size to accommodate the larger contact area needed for low power losses. ApplicationsThe IRFS52N15DPBF device is suitable for use in many applications such as DC-DC converters, telecom switching applications, brushless DC motor drives, power supplies, industrial and automotive applications, switched-mode power supplies, and general purpose switching. In addition, it can also be used for low power, medium power, and high power applications in laptops, mobile phones, PDP/LED TVs, gaming consoles, and many other electronic and automotive products. ConclusionThe IRFS52N15DPBF is an advanced single-N-channel insulated-gate field-effect transistor (IGFET) manufactured by IR which has wide global applications in power-handling and power management circuits. It has an on-resistance of 49.9 mΩ and a maximum drain current of 15 A. It is suitable for use in low, medium and high power applications such as DC-DC converters, telecom switching applications, brushless DC motor drives, power supplies, and general-purpose switching. Its features, high current rating, low on-resistance, good temperature range, and low gate-threshold voltage make it the ideal choice for many power switching applications.
The specific data is subject to PDF, and the above content is for reference
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