Allicdata Part #: | IRL7833LPBF-ND |
Manufacturer Part#: |
IRL7833LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 150A TO-262 |
More Detail: | N-Channel 30V 150A (Tc) 140W (Tc) Through Hole TO-... |
DataSheet: | IRL7833LPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4170pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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The IRL7833LPBF is part of a class of devices known as metal–oxide–semiconductor field-effect transistors, or MOSFETs for short. Sometimes referred to as an insulated-gate field-effect transistor (IGFET), these transistors are three-terminal semiconductor devices used to control the flow of current in applications where high efficiency is necessary. The IRL7833LPBF is specifically a single N-Channel MOSFET, meaning that it is designed to pass current in only one direction while providing a low-resistance path for the current to flow through. The IRL7833LPBF is designed to handle higher currents than traditional transistors, and is typically used in applications such as switching, current control, and level shifting.
The IRL7833LPBF is typically used in applications that require a high current with low resistance. Specifically, it is often used in DC-DC power supplies, as well as AC to DC and DC to DC conversion systems. The IRL7833LPBF can also be used in applications such as automotive engine control, power monitors, motor controllers, and PC power supplies. Additionally, the IRL7833LPBF is commonly used in power over Ethernet (PoE) applications due to its high current on/off switching capabilities.
The IRL7833LPBF works by using a gate terminal to open and close a conducting path between the source and drain terminals. When the gate terminal is high (or “on”), a conductive path is created between the source and the drain terminals. Conversely, when the gate terminal is low (or “off”), the path is broken and no current flows. By controlling the voltage on the gate terminal, the flow of current between the source and the drain terminals can be easily adjusted.
The IRL7833LPBF is designed to operate with both moderate and high currents, and can operate at voltages of up to 100V. It has an RDS(ON) (drain-source on-resistance) of 5 mΩ and a Max VGS (gate-source voltage) of ±20V. The IRL7833LPBF is available in a range of different packaging options, such as the TO-220AB package and the SO-8 package.
The IRL7833LPBF is a useful single N-Channel MOSFET that is often used in power management applications. It is designed to handle larger currents than traditional transistors, and is designed to operate with both moderate and high current levels. It has an RDS(ON) of 5 mΩ and a Max VGS of ±20V, and is available in a range of different packaging options. The IRL7833LPBF can be used in applications such as DC-DC power supplies, automation engine control, power monitors, and PC power supplies.
The specific data is subject to PDF, and the above content is for reference
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