IRL7833SPBF

Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4170pF @ 15V
FET Feature:	--
Power Dissipation (Max):	140W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Series:	HEXFET®
Packaging:	Tube
Part Status:	Discontinued at Digi-Key
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.8 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	47nC @ 4.5V

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

IRL7833SPBF is a single N-channel MOSFET. It has a low gate threshold drive and very low Ron resistance values which makes it ideal for a variety of applications. This article will discuss the application fields and working principle of this MOSFET.

Application Fields

The IRL7833SPBF is suitable for application in a number of fields. Its low gate threshold drive and low Ron resistance values make it an ideal device for applications which require high current flow in a low gate-drive voltage and power mode. The following are some of the application fields suitable for use with IRL7833SPBF:

• DC-DC Converter: The device can be used in a DC-DC converter circuit to enhance the transfer of power from the input source to the load. The device’s low Rdson makes it especially suitable for applications which require high current flow in low gate drive voltages.
• Active Clamp: The IRL7833SPBF can be used in an active clamp circuit, which is a common topology used in switched-mode power supplies. This circuit is used to lower output voltage and minimize the losses associated with the power transistor. The IRL7833SPBF is ideal for this application because of its low Rdson, which ensures a high efficiency rate.
• Electronic Load: This device can also be used in electronic load circuit, which is used to control the current and power being drawn from the source. With its low Rdson and high current carrying capacity, the IRL7833SPBF is well-suited for this application.
• Switched Mode Power Supplies: The device can be used to enhance the efficiency and power of a switched mode power supply (SMPS). Due to its low Rdson and high current capabilities, IRL7833SPBF is ideal for this application.

Working Principle

The IRL7833SPBF is a type of MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. This type of transistor is a voltage-controlled semiconductor device which can be used to control the flow of current in an electrical circuit. The IRL7833SPBF is a N-channel depletion mode MOSFET, which means that it is a MOSFET with a single N-type channel. The N-type channel carries electrons from the source to the drain when the gate voltage is raised above the threshold level. This behavior is opposite to that of an opposite P-type channel, which carries holes (positive charge carriers) from the drain to the source.

Conclusion

To summarize, IRL7833SPBF is a single N-channel MOSFET which can be used in a variety of applications due to its low gate threshold drive and low Ron resistance values. This makes it an ideal device for applications which require high current flow in a low gate-drive voltage and power mode. Applications suitable for use with this MOSFET include DC-DC converters, active clamps, electronic loads and switched-mode power supplies. The device is a type of MOSFET which is a voltage-controlled semiconductor that can control the flow of current in an electrical circuit.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description