| Allicdata Part #: | SI4420DYPBF-ND |
| Manufacturer Part#: |
SI4420DYPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 12.5A 8-SOIC |
| More Detail: | N-Channel 30V 12.5A (Ta) 2.5W (Ta) Surface Mount 8... |
| DataSheet: |  SI4420DYPBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | HEXFET® |
| Packaging: | Tube |
| Part Status: | Discontinued at Digi-Key |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 12.5A, 10V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2240pF @ 15V |
| FET Feature: | -- |
| Power Dissipation (Max): | 2.5W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Description
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SI4420DYPBF is a transistor from the category of FETs and MOSFETs that works on a single principle. Application of this transistor is mainly for amplifying signals and to provide RF switching. It is a Single Gate Metal Oxide Field-Effect Transistor (MOSFET). This part implements the N-channel MOSFET with a small size of 1.6mm x 1.25mm. It is commonly used in small switch applications where low voltage and power is required such as cell phone, radio and low power radio control applications.
A field-effect transistor (FET) is a type of transistor that uses electric fields to control the flow of current. It is made up of three terminals, the source and the drain which are both connected to the electrodes of an electrical circuit, and the gate which is between the two. An FET works by the electric current passing through the source and drain, creating a voltage drop between them. The voltage then creates an electric field in the space between the two terminals, causing a change in the current from the gate to the drain. By changing the voltage on the Gate, the current between the source and the drain can be controlled.
The SI4420DYPBF is a high performance N-channel MOSFET, meaning the channel is composed of N-type material and the flow of current runs from source to drain. This MOSFET is designed for low voltage operation, so there is minimal power consumption. It has a low input capacitance and fast switching speeds, making it an ideal solution for many small switch applications. This type of transistor also has high electrical noise immunity, frequency agility, and excellent RF performance.
When the gate voltage of SI4420DYPBF is negative, it will turn the transistor off, and when it is positive, it will turn the transistor on, allowing current to flow. This type of transistor is also known as an enhancement mode fet, meaning that the device is always in an “on” state, however it needs to be activated by applying positive voltage to the gate. This makes the SI4420DYPBF a good choice for applications that need the transistor to be turned on and off quickly, such as low power radio control systems.
Overall, the SI4420DYPBF is a very useful transistor for small switching applications that require low voltage and power, small switching, and excellent RF and noise immunity. This device is commonly used in a wide range of applications from cell phones, radios, and low power radio controls. It is also very easy to use with its simple single gate operation and fast switching speeds.
A field-effect transistor (FET) is a type of transistor that uses electric fields to control the flow of current. It is made up of three terminals, the source and the drain which are both connected to the electrodes of an electrical circuit, and the gate which is between the two. An FET works by the electric current passing through the source and drain, creating a voltage drop between them. The voltage then creates an electric field in the space between the two terminals, causing a change in the current from the gate to the drain. By changing the voltage on the Gate, the current between the source and the drain can be controlled.
The SI4420DYPBF is a high performance N-channel MOSFET, meaning the channel is composed of N-type material and the flow of current runs from source to drain. This MOSFET is designed for low voltage operation, so there is minimal power consumption. It has a low input capacitance and fast switching speeds, making it an ideal solution for many small switch applications. This type of transistor also has high electrical noise immunity, frequency agility, and excellent RF performance.
When the gate voltage of SI4420DYPBF is negative, it will turn the transistor off, and when it is positive, it will turn the transistor on, allowing current to flow. This type of transistor is also known as an enhancement mode fet, meaning that the device is always in an “on” state, however it needs to be activated by applying positive voltage to the gate. This makes the SI4420DYPBF a good choice for applications that need the transistor to be turned on and off quickly, such as low power radio control systems.
Overall, the SI4420DYPBF is a very useful transistor for small switching applications that require low voltage and power, small switching, and excellent RF and noise immunity. This device is commonly used in a wide range of applications from cell phones, radios, and low power radio controls. It is also very easy to use with its simple single gate operation and fast switching speeds.
The specific data is subject to PDF, and the above content is for reference
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