FQD7N20LTF

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The FQD7N20LTF is a high-performance enhancement mode, N-Channel Power MOSFET consisting of vertical DMOS transistors on a high-voltage capable silicon substrate. This FET is particularly suitable for high-efficiency switching regulators and converters, as well as motor control and switching applications. The device is optimized and characterized with nearly perfect avalanche characteristics and fast switching capability, perfect fit for high-frequency switch-mode applications where switching losses need to be kept to a minimum. 

Application Field

The FQD7N20LTF is used in multiple application fields, such as electrical applications, automotive electronics, or intelligent power modules. It can also be used for power switches and for power supplies, laser diodes, opto-couplers, and inverters. The device is designed for industrial, military, and commercial applications where superior high-temperature performance is required.

Additionally, the high-voltage capability of the FQD7N20LTF makes it ideal for dynamic braking, motor control, and other high- voltage applications. This MOSFET is available in a thermally-enhanced ultra-low RDS(on), SO-8 package that reduces on-resistance and limits thermal resistance. The device also has a low gate charge and low input capacitance, enabling it to switch at higher speeds than traditional MOSFETs. This makes it great for high-performance switching and motor control applications.

Working Principle

The FQD7N20LTF utilizes an enhancement-mode MOSFET structure which allows for better performance and power efficiency. The device is designed for high- current and high-voltage switching applications that require superior performance in high-temperature environments. The working principle is based on the use of a vertical structure of P-Channel enhancement-mode transistors that are connected in parallel. The vertical structure is surrounded by N-channel devices which makes the FET able to switch higher voltages, as well as higher currents than traditional MOSFETs.

The FQD7N20LTF has a low gate charge and a low input capacitance which makes it well suited for high-frequency applications. This device is also built with a very low RDS(on), making it perfect for applications where power dissipation is an issue. The device is also capable of high frequency operation up to 3 MHz, and comes with an internal thermal shutdown feature that protects against thermal runaway. 

The FQD7N20LTF is RoHS compliant and is designed to meet the requirements of CEC and UL/EN 50581 standards.  The device has a wide operating temperature range of -55 °C to 175 °C and is available in a thermally-enhanced low RDS(on), 8-Lead SOIC package. 

Overall, the FQD7N20LTF is a high-performance, N-Channel MOSFET that is perfect for high-efficiency switching and motor control applications. Its vertical structure and low RDS(on) make it great for high-voltage and high-current switching applications. The device is available in an 8-Lead SOIC package and is RoHS compliant.

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