Allicdata Part #: | FQD7P06TF-ND |
Manufacturer Part#: |
FQD7P06TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 5.4A DPAK |
More Detail: | P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surfac... |
DataSheet: | FQD7P06TF Datasheet/PDF |
Quantity: | 1000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 451 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 295pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FQD7P06TF is a type of MOSFET transistor that is a single field effect transistor. This type of device is popular in various industries as it provides a high current switching capability with very low on-state resistance. This kind of transistor is also used in DC-to-DC converters, motion controllers, motor drive systems, and high efficiency switches.
The FQD7P06TF is a field effect transistor which means that it works by creating a conduction channel when electric fields are applied to its terminals. The reaction of electric fields to the FQD7P06TF creates a three dimensional inversion layer within the substrate material. This inversion layer is known as an "electron cloud" which is composed of a great many electrons. These electrons are only mobile within the inversion layer and can be a part of a current. The current flow then depends on both the voltage input and the conduction resistance of the inversion layer.
The FQD7P06TF is designed to reduce issues with gate lag, spurious turn-on and can handle a lot of power. As it is an enhancement-mode MOSFET, it can retain electrostatic discharge capability and can be used in a variety of power supply applications. It has a continuous current rating of 61A, a peak pulsed current rating of 183A, an Rds(on) of 0.106Ω and a drain source breakdown voltage (Vds) of 60V. It is ROHS compliant, has a compact surface-mounted package, and an extended temperature range of -55°C to +150°C.
The FQD7P06TF is seen as a viable option for many applications because of the high current switching capability and the low on-state resistance. It is suitable for a variety of applications such as dc-to-dc converters, motion controllers and motor drive systems, reducing both materials cost and improving efficiency. Because of the low on-state resistance, the FQD7P06TF does not present much power loss or thermal rise. Its high-speed switching capability makes it particularly useful for power switching applications.
To summarize, the FQD7P06TF is a field effect transistor which uses electric fields to create a conduction channel. This device has a continuous current rating of 61A and a peak pulsed current rating of 183A. It is suitable for a variety of power supply applications such as dc-to-dc converters, motion controllers, motor drive systems, and high efficiency switching applications. It has a low on-state resistance and provides high-speed switching capability. The FQD7P06TF provides high current switching capability and very low on-state resistance, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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