APT25GP90BG Discrete Semiconductor Products |
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Allicdata Part #: | APT25GP90BG-ND |
Manufacturer Part#: |
APT25GP90BG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 900V 72A 417W TO247 |
More Detail: | IGBT PT 900V 72A 417W Through Hole TO-247 [B] |
DataSheet: | APT25GP90BG Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | POWER MOS 7® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 900V |
Current - Collector (Ic) (Max): | 72A |
Current - Collector Pulsed (Icm): | 110A |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 25A |
Power - Max: | 417W |
Switching Energy: | 370µJ (off) |
Input Type: | Standard |
Gate Charge: | 110nC |
Td (on/off) @ 25°C: | 13ns/55ns |
Test Condition: | 600V, 25A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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An IGBT (Insulated Gate Bipolar Transistor) is a type of transistor that combines the properties of both a traditional bipolar transistor and a field effect transistor. IGBTs are commonly used in high frequency applications such as power electronic converters, switch-mode power supply, motor control and other similar applications. The GP90BG is a single IGBT component manufactured by APT25. It has a maximum collector-emitter voltage of 900V and a maximum collector current of 90A.
Application Field
The GP90BG is designed for medium to high power applications, such as power electronic converters, lamp ballasts, welding, motor control, and other similar applications. The component is well-suited for high-frequency, high-temperature operations. Additionally, the component has a low forward voltage drop and is able to deliver high efficiency with fast switching times.
Working Principle
The GP90BG is a high-power IGBT component with high current carrying capacity. It is composed of a P-type semiconductor layer sandwiched between two N-type layers, which forms a junction. When a positive voltage is applied to the gate of the component, the P-layer creates an insulating barrier, preventing current from flowing through the component. This makes the device turn off and it acts as an open switch.
When no voltage is applied to the gate, the P-layer becomes conductive and current is allowed to flow through the component. This turns the device on, making it act as a closed switch. This on/off action is controlled by the gate voltage that is applied to the component.
In addition to switching, the GP90BG also acts as a voltage regulator. It is designed to reduce the voltage across it when the current through it is higher than the rated current. It is also able to convert high voltage AC power into low voltage DC power.
Conclusion
The GP90BG is a single IGBT component manufactured by APT25 which is designed for high power applications such as power electronic converters and motor control. It is composed of a P-type semiconductor layer which permits and prevents current from flowing through the component, depending on the applied gate voltage. This gives the GP90BG the ability to switch and regulate voltage, making it a versatile and powerful component.
The specific data is subject to PDF, and the above content is for reference
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