BA679-GS08 Allicdata Electronics

BA679-GS08 Discrete Semiconductor Products

Allicdata Part #:

BA679-GS08GITR-ND

Manufacturer Part#:

BA679-GS08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE PIN 30V SOD80 MINIMELF
More Detail: RF Diode PIN - Single 30V 50mA SOD-80 MiniMELF
DataSheet: BA679-GS08 datasheetBA679-GS08 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 50mA
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Resistance @ If, F: 50 Ohm @ 1.5mA, 100MHz
Operating Temperature: 125°C (TJ)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Description

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The BA679-GS08 could be categorized as one of the RF diodes, which is primarily used in RF applications. Compared with a regular diode, a RF diode can conduct current at GHz frequency. The BA679-GS08 possesses a particular advantage which is extremely low noise, superior performance and superior current temperature coefficient.

The BA679-GS08 is ideally applied in applications where extreme low noise, high gain, and high linearity are required, such as in RF amplifier and RF receiver. Integrated circuits commonly used in applications requiring RF diodes include devices such as IF Mixer, VCO, Oscillator, VGA, PA, LNA, and many more.

As a general rule, the BA679-GS08 could be used as a switch in an amplifier. When the switch is off, the active device has no current, it shifts into standby mode. When the switch is turned on, current flows through the active device, the RF input signal is amplified, and then transferred to the output port. The type of active device used in the set up will decide the resulting noise and linearity performance.

In addition, BA679-GS08 diodes are also found in switching control circuits, attenuators, and frequency control circuits. As for frequency control circuits, the diode is used for pulse shaping or frequency shaping. It is implemented as a basic component in RF circuit designs.

The working principle of the BA679-GS08 could be understood by looking into its technical characteristic. This device has an extremely low noise figure which is below 0.2dB. This kind of low noise figure allows it to be applied in RF systems that require low noise performance. The low noise figure also ensures fast response and high gain. The device also features a wide dynamic range, which allows it to work in extreme conditions, without sacrificing its performance.

More technical characteristics to this diode includes a fast turn-on time of 15ns, which is ideal for high speed applications; good linearity; and a wide frequency range from 500MHz to 2.5GHz. The device is also highly temperature-stable and durable, making it suitable for long-term applications.

In summary, the BA679-GS08 is categorized into RF Diodes and is suitable for applications where extreme low noise, high gain, and high linearity is required. Its key technical characteristics such as wide dynamic range, wide frequency range, fast turn-on time, and low noise figure makes it suitable for RF systems. It is commonly used in RF amplifier, RF receiver, IF Mixer, VCO, Oscillator, VGA, PA, LNA, as well as in switching control circuits, attenuators and frequency control circuits.

The specific data is subject to PDF, and the above content is for reference

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