APT20M38BVFRG

Series:	POWER MOS V®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	38 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	225nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	6120pF @ 25V
FET Feature:	--
Power Dissipation (Max):	370W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247 [B]
Package / Case:	TO-247-3

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Introduction

The APT20M38BVFRG is a low-voltage, low-power, advanced process transistor which can be used in a wide range of applications. It is a PowerMOS transistor which is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and can be widely applied in the fields of digital integrated circuits, computers, cellphones, automotive electronic systems, and other applications. This article provides an overview of the application field and working principle of this device.

Application Field

The APT20M38BVFRG is a vertical N-channel MOSFET of a wide operating voltage range specification from 1.8V to 20V. Its maximum drain saturation voltage is up to 0.7V, making it suitable for applications in a wide range of areas. For example, in power management of digital products, such as portable electronic equipment, it can be used to switch electronic loads or control the voltage or current. In the field of power management of automotive electronics, it can be used to control the motors. It also has various other applications such as being used in LED driver circuits, solar power systems, and more.

Working Principle

The APT20M38BVFRG is an N-channel MOSFET which consists of a gate, drain, and source. The gate terminal controls the voltage between the drain and the source; when a voltage is applied to the gate, electrons from the drain will become attracted to the gate terminal, increasing the number of free electrons in the drain which increases the conductive channel between the drain and the source. When the voltage of the gate is removed, the electrons are repelled back to the source, thus decreasing the number of free electrons in the conductive channel and resulting in a decrease in the current. This is how the principle of the APT20M38BVFRG works.

Advantages of APT20M38BVFRG

The APT20M38BVFRG has several advantages compared to other transistors. Firstly, it has a very low RDS-on (drain-source resistance) which reduces power losses and increases efficiency. Secondly, it has a low gate input, which reduces the amount of current needed to activate the transistor. Lastly, it has a low turn-on threshold voltage (VTH), which reduces the amount of voltage required to activate the device, making it more suitable for low voltage applications.

Conclusion

The APT20M38BVFRG is a low-voltage, low-power, advanced process transistor which can be used in a wide range of applications. Its low RDS-on, low gate input, and low VTH make it suitable for digital integrated circuits, computers, cell phones, automotive electronic systems, LED driver circuits, solar power systems, and more. It is an N-channel MOSFET which works by the attraction and repulsion of electrons when the gate terminal is activated or deactivated, thus controlling the conductive channel between the source and drain.

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