Allicdata Part #: | APT20M38SVFRG-ND |
Manufacturer Part#: |
APT20M38SVFRG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 200V 67A D3PAK |
More Detail: | N-Channel 200V 67A (Tc) 370W (Tc) Surface Mount D3... |
DataSheet: | APT20M38SVFRG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | POWER MOS V® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 38 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 225nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 6120pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 370W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D3 [S] |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Introduction
APT20M38SVFRG is a high performance, low on-resistance, insulated-gate bipolar transistor (IGBT) designed for switching applications. It is designed for power off time efficient self-commutated inverter circuits, where frequent turn-on/off operation is required. This IGBT exhibits low switching losses and is suitable for applications in a wide variety of power management, motor control and medical imaging equipment.
Applications
APT20M38SVFRG can be used for applications such as motor drives, inverter circuits, solar grid-tie inverters, medium power systems, automotive power electronics and many other power management systems. Its low switching losses, low operating temperature and wide operating temperature range make it well-suited for motor drives and some automotive applications. In addition, it is rugged and reliable and offers high reliability.
Working Principle
APT20M38SVFRG works by using an insulated gate to control the flow of electrical current between the two active electrodes of the device. A magnetic field is generated between the two electrodes according to Faraday\'s law of induction. This field induces a voltage across the two electrodes and the voltage controls the flow of electrons between the two electrodes, thus allowing for the control of the current. When the voltage is lowered, the current is also lowered, allowing for the switching off of the device. In contrast, when the voltage is increased, more electrons travel between the two electrodes, allowing for the switching on of the device.
Advantages
APT20M38SVFRG offers several advantages over other types of transistors. It has a low on-resistance and can operate at much higher frequencies than many other transistors. Additionally, it uses insulated gates and this helps to reduce switching losses and provides high operating temperature stability. Since the gates are insulated, it also helps to reduce noise and enhances the reliability of the switching operation. Furthermore, it is fully compatible with both positive and negative gate biasing as well as with all types of gate drivers.
Disadvantages
One major disadvantage of APT20M38SVFRG is its relatively high cost. Furthermore, it is not suitable for high current applications due to its limited current capacity. Additionally, the device is not tolerant to high dv/dt which can cause premature failure.
Conclusion
APT20M38SVFRG is a high performance IGBT designed for switching applications. It provides low switching losses, high operating temperature stability, wide operating temperature range and is compatible with several gate drivers. It is suitable for motor drives, inverter circuits, automotive power electronics and many other power management systems. However, it is relatively costly and has limited current capacity. Furthermore, it is not tolerant to high dv/dt.
The specific data is subject to PDF, and the above content is for reference
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