Allicdata Part #: | APT20N60SC3G-ND |
Manufacturer Part#: |
APT20N60SC3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 20.7A D3PAK |
More Detail: | N-Channel 600V 20.7A (Tc) 208W (Tc) Surface Mount ... |
DataSheet: | APT20N60SC3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2440pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D3Pak |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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APT20N60SC3G is a N-Channel Enhancement Mode MOSFET manufactured by Advanced Power Technology, Inc. This low thermal resistance MOSFET is designed for high speed switching applications and its wide SOA allows for a variety of applications. It has an operating temperature range up to 150°C, a channel on-resistance of 0.26 ohm, and an intrinsic gate threshold voltage of 5.0 V.
The APT20N60SC3G is a MOSFET device that has two terminals, the Gate and the Drain. It is a bidirectional power transistor and can be used either as a switch or an amplifier. When it’s used as a switch, the Gate is connected to a control signal and the Drain is connected to the load. When self-biased, the Drain-Source voltage should not exceed the absolute maximum of ±20 V. When the device is used as an amplifier, the Gate is biased with a DC voltage. The drain can either output the same voltage as input or convert the input voltage to an amplified voltage.
The APT20N60SC3G has a wide range of applications in various areas. It can be used in power distribution systems, as a part of a low-cost power switch or in situations where low on-resistance is desired. It is also used to reduce electromagnetic interference in electronic devices and as a part of a half-bridge configuration. Additionally, it is suitable for use in generally low power applications and provides fast switching speed, making it ideal for a variety of high-speed applications. It can also be found in automotive systems, consumer electronics, and power management products.
The APT20N60SC3G\'s enhanced channel on-resistance, less channel capacitance and faster switching times also make it ideal for use in RF and microwave communications. The low gate charge improves switching speeds in high frequency applications and the low gate-drain capacitance makes it suitable for high-speed RF switching applications. Its wide SOA further allows for it to be used in industrial and commercial applications, such as power supplies, converters, and other power systems, among other applications.
Due to its wide range of applications, the APT20N60SC3G is a versatile and reliable device. The low thermal resistance enhances system reliability, while the wide SOA offers a wide range of uses. The high-speed switching allows it to be used in various high-speed applications and the low gate charge makes it suitable for RF switches and amplifiers. Despite these advantages, it is important to use the device safely to prevent any risk of damage or injury.
The specific data is subject to PDF, and the above content is for reference
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