FDPF7N50U Allicdata Electronics
Allicdata Part #:

FDPF7N50U-ND

Manufacturer Part#:

FDPF7N50U

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 5A TO-220F
More Detail: N-Channel 500V 5A (Tc) 39W (Tc) Through Hole TO-22...
DataSheet: FDPF7N50U datasheetFDPF7N50U Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: UniFET™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
FET Feature: --
Power Dissipation (Max): 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Description

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Introduction to FDPF7N50U Application Field and Working Principle

The FDPF7N50U is a D-type power MOSFET package, featuring a high density cell structure for increased transistor density and improved performance. It is ideal for use in applications such as high-power switching, high-speed switching, high-frequency amplification, and other high-grade power FET applications. This article will explain the application field and working principle of FDPF7N50U.

Application Field of FDPF7N50U

FDPF7N50U is a special kind of MOSFET package designed for high-power and high-frequency applications, such as motor drives, power switching, microwave ovens and other high-efficiency power applications. As a power transistor, it is a higher performance and cost-effective solution to replace the traditional power MOSFETs. Its unique structure and design allows for higher current capability and faster switching speeds, thereby improved in many aspects.

The most distinguishing feature of FDPF7N50U is the D-type outline package, which has a high density cell structure and advanced design for increased transistor density and power density. As a special kind of MOSFET, the FDPF7N50U has a built-in protection Gate-drain arch, which allows it to withstand large voltage spikes and significantly reduces the device\'s ESD susceptibility.

In addition, the FDPF7N50U MOSFET also offers a low on-resistance, which results in reduced power loss, improved power efficiency, and faster switching speeds. These features make it an ideal choice for applications such as motor drives and other high-efficiency power conversion applications.

Working Principle of FDPF7N50U

The FDPF7N50U MOSFET works on the principle of metal-oxide-semiconductor field-effect transistor. It is composed of three layers of materials, including a source electrode, a drain electrode, and a gate. When voltage is applied to the gate, the electrons in the source and drain layers are attracted and move towards the gate, causing a shift in the electric field.

This shift in the electric field causes a change in the resistance between the source and drain, thus allowing the FDPF7N50U MOSFET to act as a switch, controlling the current flowing through the device. This principle of operation makes FDPF7N50U MOSFETs ideal for applications involving high-power switching and high-speed switching applications.

Conclusion

This article has explained the application field and working principle of FDPF7N50U. The FDPF7N50U is a special type of MOSFET, designed for high-power and high-frequency applications such as motor drives, power switching and microwave ovens. It has a unique D-type cell structure with an integrated protection Gate-drain arch, which allows it to withstand large voltage spikes and significantly reduces the device’s ESD susceptibility. It also offers a low on-resistance for power efficiency and faster switching speeds. All these features make the FDPF7N50U an ideal choice for high-power and high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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