Allicdata Part #: | FDPF12N35-ND |
Manufacturer Part#: |
FDPF12N35 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 350V 12A TO-220F |
More Detail: | N-Channel 350V 12A (Tc) 31.3W (Tc) Through Hole TO... |
DataSheet: | FDPF12N35 Datasheet/PDF |
Quantity: | 1000 |
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 350V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 31.3W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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FDPF12N35 is a type of single N-channel power field-effect transistor or FET, comprising of a vertical N-channel trench MOSFET. It is a part of a family of 2nd generation vertical N-channel MOSFETs from Diodes Incorporation. These transistors are available in Power MLP (Power Mini Leadless Package) packages equipped with an exposed pad to ensure the optimum performance from the device. These highly efficient, cost effective and reliable FETs are suitable for use in various general-purpose power switching applications.
The FDPF12N35 offers some outstanding features that make it suitable for a wide range of high-power switching applications such as power supplies, converters and motor drives. The device offers an avalanche rugged technology which ensures improved reliability and performance of the device. It also provides improved safe operating area (SOA) curves up to 170A and temperatures up to 175oC. The device has an ultra-low resistance with an Rds(on) of 4.2mΩ at 10V and a drain-source voltage range of 10V to 100V. Other features of the FDPF12N35 includes 9nC to 150nC fast switching speed, low gate charge of 2.1nC, and low thermal resistance of 1.3°C/W.
The FDPF12N35 is a versatile power FET suitable for a wide range of applications. It is a P-channel MOSFET, which means that the current flow through the channel is from the source to the drain. To switch it on, the gate voltage must be increased to a level higher than the source voltage plus the threshold voltage, which is typically around 4 volts. When the gate voltage is set above the voltage between the source and drain, the channel of the FET opens up, allowing current to flow through the FET and connecting the drain and the source. To switch it off, the gate voltage is decreased to below the threshold voltage, closing the channel and routing the current away from the source and drain. This high-speed switching between the drain and the source is what makes the FDPF12N35 ideal for power switching applications.
The FDPF12N35 is mainly used in switching applications that require high power switching efficiency, high-speed switching, improved reliability, and cost effectiveness. It is suitable for use in AC/DC switching, power converters, solid state relays, DC to DC converters, motor drives, lighting systems and automotive applications. Furthermore, the FDPF12N35 can be used as a high voltage and current switching device, capable of operating at peak current levels of up to 150A.
In summary, the FDPF12N35 is a single N-channel power FET that is widely used in various power switching applications. With features such as low on-state resistance, fast switching speeds, improved reliability and cost effectiveness, it is an ideal device for high-power switching operations. It is suitable for automotive, lighting, DC/DC converters and motor drive applications, to name a few.
The specific data is subject to PDF, and the above content is for reference
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