Allicdata Part #: | IRL7833STRRPBF-ND |
Manufacturer Part#: |
IRL7833STRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 150A D2PAK |
More Detail: | N-Channel 30V 150A (Tc) 140W (Tc) Surface Mount D2... |
DataSheet: | IRL7833STRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4170pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IRL7833STRRPBF is a P-channel metal-oxide-semiconductor field-effect transistor (MOSFET), which is a type of transistor that is widely used in various digital and analog circuits. The device is rated for a maximum current of 128 Amps and a maximum voltage of 30 Volts, making it ideal for high-current, high-voltage applications. It has a power dissipation rating of up to 0.43 Watts, allowing it to handle high levels of power. The MOSFET also features a low thermal resistance junction-to-ambient, making it capable of operating at high temperatures.
The structure of a MOSFET is similar to that of a BJT, with its three terminals (source, drain, and gate). The gate is used to control the current flow between the source and the drain with an applied voltage. It works on the principle of an insulated gate, meaning that a voltage applied to the gate can create a field which controls the flow of current between the source and the drain. This gate is made of a high-resistance material, which prevents current from flowing through it. The source and the drain, on the other hand, are made of semiconductor material, which is conductive and allows current to flow through.
When no voltage is applied to the gate, the MOSFET is said to be in a cut-off state, meaning that current does not flow between the source and the drain. However, when a voltage is applied to the gate, the MOSFET is said to be in an on or active state, meaning that current can flow between the source and the drain. The voltage applied to the gate determines the amount of current that can flow through the transistor, which is determined by the device\'s resistance. A higher voltage applied to the gate results in a higher current flow and a lower voltage applied to the gate results in a lower current flow.
The IRL7833STRRPBF is a P-channel MOSFET, meaning that when voltage is applied to its gate, a current flows from the drain to the source. This type of MOSFET is commonly used in applications such as switching, power regulation, and load switching. It is particularly useful for applications where high levels of power need to be switched quickly and efficiently, as is the case with automotive applications such as load switching for headlights or fog lamps. Due to its low on-state resistance (RDS(on)) of 0.035 ohms, the IRL7833STRRPBF is ideal for high-current, high-voltage applications.
The IRL7833STRRPBF is a versatile MOSFET that is well-suited for a wide range of applications. Its high-current capacity, low thermal resistance, and low on-state resistance make it an ideal choice for applications that require a high level of power in a short amount of time. It is also a reliable device, with a maximum current of 128 Amps and a maximum voltage of 30 Volts, making it suitable for high-current, high-voltage applications. Its wide variety of uses makes it one of the most popular MOSFETs available, and it is sure to be a valuable addition to any circuit.
The specific data is subject to PDF, and the above content is for reference
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