Allicdata Part #: | FQD7P06TM_NB82050-ND |
Manufacturer Part#: |
FQD7P06TM_NB82050 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 5.4A DPAK |
More Detail: | P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surfac... |
DataSheet: | FQD7P06TM_NB82050 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 451 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 295pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FQD7P06TM_NB82050 is an application field and working principle of a MOSFET. It is primarily used to switch signals on and off with greater efficiency than previously possible with bipolar transistors. This makes it ideal for a wide range of uses and applications.
At its core, the FQD7P06TM_NB82050 is a dual-gate enhancement-mode MOSFET, or Field Effect Transistor. It is a device that uses voltage to control current. This type of transistor has two gate terminals, one of which is the control and the other is the signal. The control gate is used to control the current flow through the signal terminal, while the signal gate allows the voltage to pass through.
The dual-gate MOSFET allows more efficient switching of electronic signals. The two gate terminals are connected internally, and the signal gate works in response to the control gate. This allows the signal to be switched off and on much more quickly and efficiently compared to a regular transistor. The dual-gate MOSFET operates better with higher frequencies, making it ideal for switching high-frequency signals.
The FQD7P06TM_NB 82050 has a voltage rating of 500 V, making it suitable for high-power applications. It features a continuous drain-source current rating of 6A and can handle a maximum peak current of 8A. It also has a low on-resistance of 50.6 mΩ, making it more efficient and efficient heating which can improve the performance of a system.
The FQD7P06TM_NB82050 is also used in high-frequency switching applications like DC-DC converters, voltage regulators, and pulse-width modulation (PWM) circuits. It can also be used in low-power RF amplification circuits. In these applications, the FQD7P06TM_NB82050 can switch between two different voltages, allowing it to control the amount of power being used. In addition, the device has a low gate capacitance of 5.0 pF, which can reduce the gates switching times.
The FQD7P06TM_NB82050 is a dual-gate MOSFET that has a wide range of uses. It is designed for efficient switching of electronic signals and can handle high-power applications. It features a low on-resistance, gate capacitance, and can handle high-frequency signals. This makes it ideal for many types of electronics applications, from high-frequency switching applications to low-power signal amplification.
The specific data is subject to PDF, and the above content is for reference
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