TPCA8010-H(TE12LQM Allicdata Electronics
Allicdata Part #:

TPCA8010-H(TE12LQM-ND

Manufacturer Part#:

TPCA8010-H(TE12LQM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 200V 5.5A SOP-8 ADV
More Detail: N-Channel 200V 5.5A (Ta) 1.6W (Ta), 45W (Tc) Surfa...
DataSheet: TPCA8010-H(TE12LQM datasheetTPCA8010-H(TE12LQM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: π-MOSV
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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The TPCA8010-H is a high-voltage, low-on-resistance, single N-channel MOSFET commonly used for various applications. This product has been developed to offer high current control and low switching noise. The device enables a wide range of applications including power switching, motor control and high current sensing applications.

The TPCA8010-H consists of a single N-channel MOSFET with a gate oxide thickness of 4.0nm and a built-in diode with a p/d structure. The device has a high breakdown voltage of 10V and a low RDS(ON) of 35m·Ω at 4.5V. In addition, it features low reverse-recovery time and reverse-recovery charge. The device is protected against electrostatic discharge (ESD) up to the level of 8kV HBM.

The TPCA8010-H can be used for various applications such as DC/DC converters, LED backlights, motor drivers and power switch control circuits. This device is also suitable for driving actuators, lamps or motors directly from a power source. It can also be used in high current sensing applications.}

The device has a relatively simple working principle. When the Gate potential is increased, the channel opens and a current can flow through the device. This current is limited by RDS(ON). When the Gate potential is decreased, the channel closes and the device turns off.

The TPCA8010-H is is a high voltage, low on-resistance MOSFET designed to provide high current control and low switching noise in various applications such as DC/DC converters, LED backlights, motor driving, power switch control circuits, and high current sensing applications. The device features a high breakdown voltage, low RDS(ON), low reverse-recovery time, and reverse-recovery charge. It also offers protection from electrostatic discharge. The low on-resistance and high-current control capabilities make it suitable for various applications.

The specific data is subject to PDF, and the above content is for reference

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