TPCA8011-H(TE12LQM Allicdata Electronics
Allicdata Part #:

TPCA8011-H(TE12LQM-ND

Manufacturer Part#:

TPCA8011-H(TE12LQM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 20V 40A SOP-8 ADV
More Detail: N-Channel 20V 40A (Ta) 1.6W (Ta), 45W (Tc) Surface...
DataSheet: TPCA8011-H(TE12LQM datasheetTPCA8011-H(TE12LQM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: U-MOSIII-H
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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The TPCA8011-H is a FET (Field-Effect Transistor) from Toshiba semiconductors. A FET is a three-terminal, unipolar semiconductor device which operates as a switch or amplifier. It is commonly used in integrated circuits and other electronic components.The TPCA8011-H is a single MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). A MOSFET is a field-effect transistor that is made up of an insulated semiconductor gate, with source and drain junctions. This type of FET is one of the most common building blocks of integrated circuits and is used as an amplifier or switch.The TPCA8011-H is designed to facilitate the design of power management applications such as load switch, OR-ing, and Polarity Reversing. It is suitable for use in a wide range of applications such as small-size power management circuits and automotive applications. With a low ON-resistance of 0.047Ω, the device is able to provide great efficiency, high power handling capability, and fast on/off switching time.The TPCA8011-H has a single-channel configuration, meaning it has a single N-channel. This configuration helps to reduce the area of the circuit and increases the current handling capability of the FET. It has an operating voltage of 6V and a drain-source voltage of 30V. The maximum-rated drain-source current is supported at a rating of 6A.The working principle of the TPCA8011-H is based on a principle of Electro-Static Discharge (ESD) protection. The device is designed to protect against ESD-related fault currents, which means it helps to ensure the stability and reliability of the power management circuit. The protection level of the device is specified as a minimum of 2.0kV. This means the device has a high level of protection against ESD currents.In order to ensure that the TPCA8011-H performs as specified, there are a few key steps to be taken in the design phase. First, the voltage ratings should be carefully checked. It is important to ensure that the operating voltage and the drain-source voltage are within the specified limits. Second, the TPCA8011-H must be connected to a suitable power supply, such as a 12V or 14V power supply. Third, when connecting an inductive load, a suitable flyback diode must be used. Finally, for higher current ratings, the device must be placed on a heatsink to ensure proper thermal management.Overall, the TPCA8011-H is an ideal choice for a wide range of power management applications due to its effective ESD protection capabilities and its small footprint. Additionally, its low ON-resistance allows for excellent efficiency and fast on/off switching times. With proper design and connection considerations taken into account, the TPCA8011-H can be used in a variety of applications with confidence.

The specific data is subject to PDF, and the above content is for reference

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