TPCA8012-H(TE12LQM Allicdata Electronics
Allicdata Part #:

TPCA8012-H(TE12LQM-ND

Manufacturer Part#:

TPCA8012-H(TE12LQM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 40A SOP-8 ADV
More Detail: N-Channel 30V 40A (Ta) Surface Mount 8-SOP Advanc...
DataSheet: TPCA8012-H(TE12LQM datasheetTPCA8012-H(TE12LQM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3713pF @ 10V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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The TPCA8012-H (TE12LQM) is a single N-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). It is designed with a low Rds(on) to reduce power dissipation, minimize heating and improve overall efficiency in a variety of switching, power and linear applications. The part is also designed to reduce low-temperature performance. The device is available in an SOT-89 package and offers multiple lead choices.

The design criteria for TPCA8012-H (TE12LQM) make it well suited for a variety of applications. It is widely used in various kinds of power distribution systems such as industrial control, telecommunications, consumer products and automotive electronics. It is also well-suited for high-power, low-voltage switched power applications. Furthermore, the device can be used in discrete digital switching circuits, synchronous rectification circuits, as well as Class D digital audio power amplifiers.

The device features high-performance trench gate MOSFET technology. It has a high-current carrying capacity and low output capacitance. This makes it suitable for applications that require fast switching speeds and high efficiency. The device can operate over a wide range of temperatures and its low on-resistance is ideal for high-efficiency applications.

The TPCA8012-H (TE12LQM) is a two-terminal device that uses a metal-gate oxide-semiconductor field-effect structure. This structure allows the MOSFET to switch on and off quickly and offers its user a high degree of flexibility due to its high input impedance and low output capacitance. The device\'s main component is a metal-oxide-semiconductor which is used to control its conduction levels. The gate voltage is used to control the MOSFET\'s status; when a positive gate voltage is applied to the device, the current flows, and when the voltage is removed, the current stops.

In order to reduce power dissipation and minimize heating, the TPCA8012-H (TE12LQM) is designed with a low Rds(on). This ensures that the gate voltage is not too high and prevents the device from consuming a large amount of energy while it is in operation. Moreover, the device is designed with a low on-resistance (Rds) which reduces power losses. These parameters enable the device to help minimize heating, extend system efficiency and improve overall performance.

The TPCA8012-H (TE12LQM) is an ideal device for a variety of applications, from digital switching circuits to high-efficiency power distribution systems. Its features make it an excellent choice for power and linear applications. With its low Rds(on), high-current carrying capacity and low output capacitance, it is the ideal solution for efficient and reliable power delivery.

The specific data is subject to PDF, and the above content is for reference

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