| Allicdata Part #: | TPCA8018-H(TE12LQM-ND |
| Manufacturer Part#: |
TPCA8018-H(TE12LQM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 30V 30A SOP-8 ADV |
| More Detail: | N-Channel 30V 30A (Ta) 1.6W (Ta), 45W (Tc) Surface... |
| DataSheet: |  TPCA8018-H(TE12LQM Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2846pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1.6W (Ta), 45W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SOP Advance (5x5) |
| Package / Case: | 8-PowerVDFN |
Description
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The TPCA8018-H (TE12LQM) is a type of single field effect transistor (FET) that is well known for its high current and low power applications. In this article, we will discuss the application field and working principle of the TPCA8018-H.The TPCA8018-H is a high voltage, high current, low power FET that is suitable for use in both digital and analog applications. It is a popular choice in power management applications, power switching circuits, audio amplifiers, and other types of low-power circuits. The TPCA8018-H also has a wide operating temperature range, making it suitable for use in both industrial and automotive applications.
The TPCA8018-H is an enhancement mode field-effect transistor (FET). It is composed of an insulated gate and a channel, with a source and a drain connected at either end. The voltage at the gate is used to control the current flowing between the source and the drain. When the voltage applied to the gate is greater than the threshold voltage, the FET is “on”, allowing current to flow between the source and the drain. When the voltage applied to the gate is less than the threshold voltage, the FET is “off”, preventing current from flowing between the source and the drain.The TPCA8018-H is designed to operate at high voltages and currents with minimal power dissipation. It is constructed using silicon on sapphire technology, which eliminates the need for an insulated gate, allowing the FET to remain in a highly conductive state even when the drain current is large. The FET also features a low gate threshold voltage, allowing it to be operated with low power supplies.The TPCA8018-H’s wide operating temperature range allows it to be used in both hot and cold environments. The FET is capable of handling high current loads while dissipating minimal power. Additionally, the TPCA8018-H features a high bandwidth, making it suitable for applications that require high-speed switching, such as switching power supplies, audio amplifiers, and motor controllers.The TPCA8018-H is an extremely reliable single field effect transistor (FET) that is well-suited for a variety of high-power and low-power applications. Its wide operating temperature range, high current and low power dissipation, and high bandwidth make it a popular choice in industrial, automotive, and power management applications.
The specific data is subject to PDF, and the above content is for reference
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