TPCA8102(TE12L,Q,M Allicdata Electronics
Allicdata Part #:

TPCA8102(TE12L,Q,M-ND

Manufacturer Part#:

TPCA8102(TE12L,Q,M

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 30V 40A SOP-8 ADV
More Detail: P-Channel 30V 40A (Ta) 1.6W (Ta), 45W (Tc) Surface...
DataSheet: TPCA8102(TE12L,Q,M datasheetTPCA8102(TE12L,Q,M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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A transistor is a fundamental semiconductor device that manipulates currents and voltages to produce the desired output according to the input. The field effect transistor (FET) is a type of transistor that uses electric field to suppress physical layer for controlling the flow of current. It is a three-terminal device that consists of a source, drain, and gate separated from each other. These terminals are usually connected to the external circuit, where a bias voltage is applied on the input terminal (which can either be positive or negative). On the other hand, a MOSFET (metal–oxide–semiconductor field-effect transistor) is a type of FET where a metal–oxide–semiconductor (MOS) structure is used as the gate instead of a conducting channel.
The TPCA8102 (TE12L,Q,M) is a single-channel n-type power MOSFET device manufactured by Toshiba. It is a low on-resistance type with a parasitic diode reversely connected between the drain and source. It is designed for DC/DC converter systems, providing effective protection from both overcurrents and short circuits when used in power control applications. Furthermore, it can also be used for applications such as motor control, DC/AC invertor, and for switching power loads.
The working principle of the TPCA8102 (TE12L,Q,M) is based on the input bias applied to the gate terminal. At low bias conditions, the device is turned off, meaning no current will flow through the drain and source. However, when the bias voltage rises above a certain threshold condition (usually around 5V), the electric field at the gate terminal causes the MOS structure to effectively open a conducting channel between the drain and the source. The larger the input bias, the larger the conducting channel between the two terminals, thereby resulting in higher current flow through the MOSFET.
The TPCA8102 (TE12L,Q,M) is designed for power applications such as DC/DC converters, motor control, and DC/AC invertors. It is able to deliver up to 4.5A of continuous drain current, which makes it suitable for power-switching operations. It also has low total gate charge and an on-state resistance of 0.75Ω at 4.5A, making it a good choice for applications that require low power losses. Furthermore, it has a high total power dissipation of 75W, enabling it to operate in high-power circuits.

The specific data is subject to PDF, and the above content is for reference

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