TPCA8A01-H(TE12L,Q Allicdata Electronics
Allicdata Part #:

TPCA8A01-H(TE12L,Q-ND

Manufacturer Part#:

TPCA8A01-H(TE12L,Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 36A SOP8 ADV
More Detail: N-Channel 30V 36A (Ta) 1.6W (Ta), 45W (Tc) Surface...
DataSheet: TPCA8A01-H(TE12L,Q datasheetTPCA8A01-H(TE12L,Q Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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TPCA8A01-H(TE12LQ) is a high-frequency and high-speed transistor used for switching and amplification purposes. It is a type of field-effect transistor (FET) that is composed of a single transistor with three terminal points. These three terminals are the source (S), gate (G) and drain (D). The FET is constructed of a three-layer structure of semiconductor materials with opposing conductivity types. The source and drain are made of N-type material while the gate is made of P-type material. This structure enables the transistor to switch between two states, ON or OFF, by applying a voltage (Vg) to the gate terminal.

The TPCA8A01-H(TE12LQ) operates by controlling the electric field between the source and drain with the application of a voltage to the gate. The electric field affects the movement of electrons within the channel between the source and drain. When a voltage is applied to the gate, the electric field causes the electrons to move either away from or towards the drain, depending on the polarity of the gate voltage. This action allows the FET to either allow or restrict the flow of current between the source and drain. This action is the basis for using a FET as a switch or amplifier in circuits.

The performance of the TPCA8A01-H(TE12LQ) depends on a variety of factors, as other electronic components. Some of these factors include gate voltage and current, resistance, input voltage and frequency, and temperature. A gate voltage of -10V to 10V and current of 30mA allows the transistor to switch between on and off states quickly, allowing it to be used as a high-speed switch or amplifier. The transistor has a maximum resistance of 35Ω, which enables it to be used as an amplifier and makes it suitable for high-frequency applications since it can handle higher frequencies. The input voltage is up to 8V, making it suitable for a wide range of applications. The frequency response of the TPCA8A01-H(TE12LQ) is up to 25GHz, making it suitable for microwave-range applications. The maximum operating temperature range is -65°C to 150°C, allowing the transistor to be used in extreme environments.

The TPCA8A01-H(TE12LQ) is an ideal choice for use in high-speed and high-frequency applications due to its high switching speed and wide frequency range. It is suitable for use in analog and digital circuit applications, such as power supply circuits, communications systems, and market feedback amplifiers. It is also useful in the application of LED lighting, SiC-MOSFETs, and high-voltage power supplies.

The specific data is subject to PDF, and the above content is for reference

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