Allicdata Part #: | FDPF17N45T-ND |
Manufacturer Part#: |
FDPF17N45T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 450V 17A TO-220F |
More Detail: | N-Channel 450V 17A (Tc) Through Hole TO-220F |
DataSheet: | FDPF17N45T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 450V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2110pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
Description
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FDPF17N45T is a high-speed, high-current enhancement mode N-Channel Field Effect Transistor (FET) with an operating voltage of up to 45V. It is designed for both switching applications, such as voltage regulation, or as an amplifier or driver device. It is often referred to as a “Dual Gate MOSFET” as it has two control gates instead of the usual one.The FDPF17N45T is a type of Metal Oxide Semiconductor FET (MOSFET). It has a three-terminal gate, drain, and source connection, and is composed of a semiconductor channel that controls the current between the drain and the source. The FDPF17N45T operates in Enhancement mode, meaning it does not require a negative gate voltage to operate. This makes it ideal for some very low voltage applications. It is also completely compatible with the typical logic families, such as TTL or CMOS, which makes it easier to control.The FDPF17N45T is most commonly used in switch mode power supplies, motor control, and high-speed amplifier circuits. In these applications, the FDPF17N45T is highly reliable, with very low on-resistance, fast switching times, and very low noise and dispersion. Additionally, the FDPF17N45T is highly compact, which makes it ideal for use in space-constrained environments.The inner workings of the FDPF17N45T are based on the principle of the MOSFET. When a positive voltage is applied to the gate, electrons from the channel are attracted to the gate, forming a depletion layer in the channel, thus reducing the current flowing between the source and the drain. Conversely, when a negative voltage is applied to the gate, the electrons will be repelled, opening the channel and allowing more current to flow.The FDPF17N45T can also be used as an amplifier or a driver. When used in this manner, the FDPF17N45T is fed with a continuous signal from the source. The gate signals from the gate to the FDPF17N45T can be waveforms, such as a triangle wave, or a pulse-width modulated signal. These variations in the gate signal change the effective resistance of the FDPF17N45T, thus amplifying the signal or driving it to a higher voltage level.Overall, the FDPF17N45T is an incredibly versatile and reliable device, making it an excellent choice for a variety of switch-mode power supplies, motor control, and high-speed amplifier applications. With its high power, low noise, and strong small-signal characteristics, the FDPF17N45T is sure to be found in a multitude of applications.The specific data is subject to PDF, and the above content is for reference
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