Allicdata Part #: | FQD7N20TM_F080-ND |
Manufacturer Part#: |
FQD7N20TM_F080 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 5.3A DPAK |
More Detail: | N-Channel 200V 5.3A (Tc) 2.5W (Ta), 45W (Tc) Surfa... |
DataSheet: | FQD7N20TM_F080 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 690 mOhm @ 2.65A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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FQD7N20TM_F080 is a type of Power MOSFET (metal–oxide–semiconductor field-effect transistor), specifically a single-level N–channel MOSFET.
Essentially, it is a type of switch that is activated when a voltage is applied to the gate. This switches the MOSFET from off to on, allowing a connection between the source and the drain. The FQD7N20TM_F080 is intended for use in power applications ranging from low to high, typically in the range of 4.5A-20A when the drain source voltage (Vdss) is up to 20 volts.
This type of MOSFET is widely used as a switching element in power circuit applications such as motor driver circuits and motor speed control circuits, as well as in industrial control circuits. In addition, it is often used in high voltage power circuits, allowing signals to be distributed over very long distances.
The FQD7N20TM_F080 features a temperature range of 125C to 150C operating temperature, an on resistance of 18 milli-ohms, and an off leakage current of 7.9 nanoamps. This MOSFET has a maximum drain current of 20A, which makes it ideal for use in high current circuits.
In essence, the working principles of this MOSFET are quite simple. The FQD7N20TM_F080 features a gate that is insulated from the other components of the device, allowing voltage to be applied to the gate without it affecting the other components. When a voltage is applied to the gate, the MOSFET switches from off to on, allowing current to flow from the source to the drain. This can be used to control the amount of current flow or to regulate the power output of the device.
In conclusion, the FQD7N20TM_F080 is a versatile and reliable Power MOSFET, capable of providing efficient and reliable operations in various power applications. This device is typically used in motor drivers, motor speed control applications and in industrial control circuits, providing efficient and reliable performance. With its low on resistance, high drain current capability, and temperature stability, the FQD7N20TM_F080 is an excellent choice for applications in which efficiency and reliability are critical.
The specific data is subject to PDF, and the above content is for reference
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