Allicdata Part #: | FQD7P20TM_F080-ND |
Manufacturer Part#: |
FQD7P20TM_F080 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 200V 5.7A DPAK |
More Detail: | P-Channel 200V 5.7A (Tc) 2.5W (Ta), 55W (Tc) Surfa... |
DataSheet: | FQD7P20TM_F080 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 690 mOhm @ 2.85A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 55W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FQD7P20TM_F080 is a single field-effect transistor (FET) designed to handle high-power applications with its well-designed structure and function. It belongs to single-channel enhancement mode, which gives it a high current turning ability with low capacitance. This makes it an ideal choice for services such as battery charging, motor control and synchronous rectification.
The device is a monolithic integrated circuit in the form of a large-area polysilicon field effect transistor. It has a wide range of technical characteristics, including a low on-resistance, low gate-source capacitance, and a low leakage current. It is available in various packages, including SOT-23, FQFN and DFN.
The FQD7P20TM_F080 uses an enhancement-mode architecture. In this configuration, no external bias is required to enable operation. The gate voltage is positive to turn on the device and let current through. When the gate is grounded, the device is normally off and no current can be drawn. It has a very high input impedance, which is beneficial when the FETs are used in impedance-sensing applications.
The FQD7P20TM_F080 is usually used to control power flow in circuits. It can be used as a switch in many applications such as audio systems, motor control and driving circuits. It is usually connected with the gate voltage to adjust the output voltage. This can be done by controlling the resistance of the device. When the gate voltage rises, the resistance of the FET decreases, increasing the current and voltage.
The FQD7P20TM_F080 is suited for environments requiring high speed, efficiency, temperature resistance and high switching frequency. It has an outstanding on-resistance and gate-source capacitance performance. It also has a low-resistor package, which ensures high power dissipation. The wide operating temperature range of -55°C to 175°C allows it to be used in a variety of temperature-controlled applications.
In addition, the FQD7P20TM_F080 offers a variety of protection features. These include overload protection, UVLO protection, output overload protection and over-temperature protection. The protection features reduce the risk of damage to the device and ensure reliable operation.
In conclusion, the FQD7P20TM_F080 is a single field-effect transistor suitable for high-power applications. It has low capacitance and on-resistance, and a wide operating temperature range. It is also equipped with various protection features to reduce the risk of damage to the device. It is an ideal choice for applications such as motor control, synchronous rectification and audio systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQD7N10TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 5.8A DPA... |
FQD7P06TM_NB82050 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 60V 5.4A DPAK... |
FQD7N20TM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 5.3A DPA... |
FQD7P06TM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 60V 5.4A DPAK... |
FQD7P20TM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 200V 5.7A DPA... |
FQD7N10LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 5.8A DPA... |
FQD7N20LTF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 5.5A DPA... |
FQD7N20TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 5.3A DPA... |
FQD7N20TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 5.3A DPA... |
FQD7P06TF | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 5.4A DPAK... |
FQD7N30TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 300V 5.5A DPA... |
FQD7P20TF | ON Semicondu... | -- | 1000 | MOSFET P-CH 200V 5.7A DPA... |
FQD7P06TM | ON Semicondu... | -- | 7500 | MOSFET P-CH 60V 5.4A DPAK... |
FQD7N30TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 300V 5.5A DPA... |
FQD7N20LTM | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 5.5A DPA... |
FQD7P20TM | ON Semicondu... | -- | 10000 | MOSFET P-CH 200V 5.7A DPA... |
FQD7N10LTM | ON Semicondu... | -- | 5000 | MOSFET N-CH 100V 5.8A DPA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...