TPCA8036-H(TE12L,Q Allicdata Electronics
Allicdata Part #:

TPCA8036-H(TE12L,Q-ND

Manufacturer Part#:

TPCA8036-H(TE12L,Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 38A 8SOIC ADV
More Detail: N-Channel 30V 38A (Ta) 1.6W (Ta), 45W (Tc) Surface...
DataSheet: TPCA8036-H(TE12L,Q datasheetTPCA8036-H(TE12L,Q Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: U-MOSVI-H
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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The TPCA8036-H (TE12L,Q) is a single-chip transistor Field-Effect Transistor (FET), part of the Toshiba product line. The FET is commonly used in linear applications such as digital-to-analog and analog-to-digital converters, audio and video switchers, multiplexers, and power amplifiers.

One of the main advantages of using the TPCA8036-H (TE12L,Q) FET is that it offers low power consumption. The FET operates at a wide temperature range from -20°C to +100°C, which makes it suitable for use in harsh operating environments. Additionally, the FET is designed for high-mix applications and can be used across a variety of circuits, including interfaces with CMOS, TTL and PMOS logic systems.

The TPCA8036-H (TE12L,Q) FET is a MOSFET device. In terms of working principle, it works according to the principle of voltage-controlled current conduction, whereby a voltage is applied between the Gate and the Source terminals, and the resulting current flowing between the Drain and the Source is proportional to this applied voltage. The extent to which this current is affected by the voltage is determined by the device characteristics, namely the Drain-Source conductance and Drain-Source capacitance values.

The Gate-Source capacitance and Gate-Source resistance values of the TPCA8036-H (TE12L,Q) FET are very low, which makes it well-suited for applications that require low power consumption. Additionally, its low output capacitance values enable a high switching frequency as well as efficient power dissipation. This makes the device ideal for use in analog circuits, wideband amplifiers, and other high-speed switching applications.

Overall, the TPCA8036-H (TE12L,Q) FET is a reliable and power-efficient single-chip field-effect transistor from the Toshiba product line. It can be used in applications where low power consumption and high-speed switching are desired, such as analog to digital and digital to analog converters, audio and video switchers, multiplexers, power amplifiers, and wideband amplifiers.

The specific data is subject to PDF, and the above content is for reference

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