TPCA8048-H(TE12L,Q Discrete Semiconductor Products

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The TPCA8048-H (TE12L,Q) is an enhancement-mode Field-effect Transistor (FET) specifically designed for integration in portable applications such as notebooks, smartphones, and tablets. The device is built using a proprietary process, which allows for low thresholds, low power consumption, and low input/output capacitances. This makes the device ideal for applications requiring a high level of performance and reliability.

Features and Benefits

The TPCA8048-H (TE12L,Q) features a breakdown voltage of 6V and gate threshold voltage of 1.8V, making it suitable for use in a wide range of applications and environments. The device also has a maximum operating temperature of 125°C and a maximum drain current of 8.5A. Additionally, the device supports high-speed switching and is capable of driving 500pF loads. This makes the device suitable for applications where high switching speeds are necessary.

Applications

The TPCA8048-H (TE12L,Q) is widely used in portable applications such as notebooks, smartphones, and tablets. The device is used in applications such as power management, battery management, and controllers. Additionally, the device can be used in power switches, relays, and voltage regulators. The device is also used in automotive applications such as audio systems and navigation systems. Finally, the device is also used in industrial automation and military/aerospace applications.

Working Principle

The TPCA8048-H (TE12L,Q) is an enhancement-mode FET, which is built on a monolithic substrate. It is composed of two gates separated by a P+ layer and a dielectric layer. When a positive voltage is applied to the gate, it creates an inversion layer between the P+ layer and the dielectric layer, which increases the conductivity of the device. This causes current to flow between the source and drain terminals of the device.

The TPCA8048-H (TE12L,Q) is specifically designed for use in high-performance, low-power applications. The low gate threshold voltage and low input/output capacitances allow for low power consumption and high switching speeds. Furthermore, the device has a high breakdown voltage, allowing for higher voltage applications. The device is also designed to withstand high temperatures and shocks, making it suitable for use in a wide range of applications.

Construction

The TPCA8048-H (TE12L,Q) is constructed using a proprietary process, which includes a polycrystalline substrate and alternating N+ and P+ layers. The device consists of two gates, separated by a P+ layer, and a dielectric layer. Additionally, the device includes source and drain contact regions, and two gate-metal layers.

The TPCA8048-H (TE12L,Q) is designed to reduce the power consumption and increase the switching performance of portable electronics. Its small size and low power consumption make it ideal for integration into devices such as smartphones and tablets. Additionally, the device is designed to resist high temperatures and shocks, making it suitable for use in a wide range of applications.

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