MMBZ5252BW-7 Allicdata Electronics

MMBZ5252BW-7 Discrete Semiconductor Products

Allicdata Part #:

MMBZ5252BWDITR-ND

Manufacturer Part#:

MMBZ5252BW-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 24V 200MW SOT323
More Detail: Zener Diode 24V 200mW ±5% Surface Mount SOT-323
DataSheet: MMBZ5252BW-7 datasheetMMBZ5252BW-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 24V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 33 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 18V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMBZ5252B
Description

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The MMBZ5252BW-7 (hereinafter referred to as MMBZ) is a single Zener diode with a maximum peak repetitive power loss of 0.09W and 5.2V Zener breakdown voltage. It is a general purpose diode used in electronics and circuits control applications. The MMBZ has a low power loss and is therefore suitable for use in low power applications.

MMBZ is available in SMD, DO-35 and SOT23-3 packages. The package size varies according to the type of device. MMBZ is also available in a variety of P-N junction capacitance specifications for different applications.The MMBZ is a bidirectional device with a PN junction and designed to breakdown at a predetermined voltage.

The MMBZ can be used in a variety of applications. It is commonly used in transistor biasing circuits to provide a relatively constant DC voltage over a wide range of current. It can also be used as a clamping diode in various circuits, or as a reference voltage source. The MMBZ can also be used in overvoltage protection circuits.

The working principle of the MMBZ is based on the Zener effect. When the reverse voltage applied to the diode reaches the Zener voltage, the depletion layer of the PN junction expands, allowing electrons to tunnel through the junction and discharge the excess voltage. This process is repeated until the reverse voltage applied to the diode is less than the Zener voltage. The voltage across the MMBZ is therefore limited to the Zener breakdown voltage and does not increase above that value, regardless of the magnitude of the voltage in the circuit.

In summary, the MMBZ5252BW-7 is a single Zener diode with a maximum peak repetitive power loss of 0.09W and 5.2V Zener breakdown voltage. It is a general purpose diode used in electronics and circuits control applications. The MMBZ is also available in a range of package types and PN junction capacitance specifications for different applications. The MMBZ is designed to operate using the Zener effect, with the voltage across the device limited to the Zener breakdown voltage regardless of the magnitude of the voltage in the circuit. It is commonly used in transistor biasing circuits, overvoltage protection circuits, and as a clamping diode or reference voltage source.

The specific data is subject to PDF, and the above content is for reference

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