Allicdata Part #: | SI8405DB-T1-E3-ND |
Manufacturer Part#: |
SI8405DB-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 3.6A 2X2 4-MFP |
More Detail: | P-Channel 12V 3.6A (Ta) 1.47W (Ta) Surface Mount 4... |
DataSheet: | SI8405DB-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 4.5V |
Vgs (Max): | ±8V |
FET Feature: | -- |
Power Dissipation (Max): | 1.47W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 4-Microfoot |
Package / Case: | 4-XFBGA, CSPBGA |
Description
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SI8405DB-T1-E3 is a N-channel enhancement-mode MOSFET with a power dissipation of 6W and a drain current of 2A. It is particularly well suited for applications such as Power management, industrial motors, HVAC, and automotive solutions which must operate in high-temperature environments. This article will discuss the application field and working principle of SI8405DB-T1-E3.
Application Field and Working Principle of SI8405DB-T1-E3
Application Field
SI8405DB-T1-E3 is used in many different applications. It is widely used in power management systems, such as power supplies and motor control. It can be used to regulate the amount of current and voltage flowing through electrical circuits. It is also used in industrial motors, HVAC systems, and automotive solutions. The high-temperature rating of the device makes it well-suited for these applications.Working Principle
SI8405DB-T1-E3 is a N-channel enhancement-mode MOSFET. It consists of a source (S), gate (G) and drain (D). When a positive voltage is applied to the gate, the MOSFET will be "turned on" and current will flow from the source to the drain. This is known as the "active" state of the MOSFET. When the voltage on the gate is reduced or removed, the MOSFET will be "turned off" and no current will flow. This is known as the "non-conducting" state of the MOSFET.The SI8405DB-T1-E3 MOSFET is designed for high power applications and has a maximum drain current of 2A. The maximum drain-source voltage is also 30V and the maximum gate-source voltage is 12V. The device is designed to operate in temperatures up to 175°C, making it well-suited for high-temperature applications.Conclusion
SI8405DB-T1-E3 is a N-channel enhancement-mode MOSFET with a power dissipation of 6W, a drain current of 2A, and an operating temperature range of 0°C to +175°C. It is mainly used in power management systems, industrial motors, HVAC systems, and automotive solutions. The device is designed to regulate the amount of current and voltage through an electrical circuit while operating in high-temperature applications.The specific data is subject to PDF, and the above content is for reference
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