S07M-M-08 Discrete Semiconductor Products |
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Allicdata Part #: | S07M-M-08GITR-ND |
Manufacturer Part#: |
S07M-M-08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 700MA DO219AB |
More Detail: | Diode Standard 1000V 700mA Surface Mount DO-219AB ... |
DataSheet: | S07M-M-08 Datasheet/PDF |
Quantity: | 30000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 700mA |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8µs |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | 4pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | DO-219AB (SMF) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Single rectifier diodes are among the most common device types seen in electronic designs for a variety of application. The S07M-M-08 is no exception, and as a monolithic silicon device it is designed to suit a variety of applications where reliable performance is required in low voltage low current environments. The S07M-M-08 is an ultra-small rectifier diode with a maximum peak reverse voltage rating of 8 V. The device is constructed with a glass body and has two leads, typically red and black. One of the most common applications for the S07M-M-08 is as an output diode in DC-DC converters.
The key performance specifications of the S07M-M-08 are its small size, low forward voltage drop (VF), and fast reverse recovery. The device also has a wide operating temperature range (-55°C to 150°C) and excellent thermal response, making it suitable for use in many environments.The S07M-M-08 has a number of features that makes it particularly suitable for industrial applications. Firstly, its small size allows for easy installation in tight spaces. Secondly, its fast reverse recovery time (tRR ≦ 4nsec ) provides good electrical efficiency and produces less power dissipation. Thirdly, its low forward voltage drop (VF ≦ 0.5V) reduces current consumption and improve system output power.
The key feature of the S07M-M-08 is its monolithic construction. This type of construction enables the device to operate without noise or need for additional components. Moreover, the monolithic construction provides a low junction-to-case capacitance which reduces power loss. The device also has a low leakage current (<1 nA at 8 V) which further enhances the efficiency of the circuit.
The working principle of the S07M-M-08 is fairly straightforward. When the device is forward biased, a current flows through the chip from the anode to the cathode, which is then converted into an output voltage. The performance of the device is controlled by its breakdown voltage, which is determined by the voltage across the device when it begins conducting in reverse. The breakdown voltage is normally determined by the operating temperature of the device, and in the case of the S07M-M-08 this is approximately 6V at ambient temperature.
The S07M-M-08 is a cost-effective solution for low voltage and low current applications, such as DC-DC converters, rectification circuits and other power electronics applications. The device’s monolithic construction, wide operating temperature range and other performance specifications make it a reliable choice even in harsh industrial environments. The device’s small size, low forward voltage drop and fast reverse recovery time make it ideal for embedded applications, where reliable performance and small size are of paramount importance.
The specific data is subject to PDF, and the above content is for reference
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