Allicdata Part #: | IRFS7537PBF-ND |
Manufacturer Part#: |
IRFS7537PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N CH 60V 173A D2PAK |
More Detail: | N-Channel 60V 173A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | IRFS7537PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET®, StrongIRFET™ |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 173A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7020pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IRFS7537PBF is a type of n-channel enhancement-mode vertical DMOS power transistor. It is mainly used to switch and amplify electronic signals in different types of applications. In this article, we will discuss the application field and working principle of this power transistor.
The IRFS7537PBF transistor is usually used for high-power switching applications. It is designed to be driven by an external voltage source and can handle large load currents up to 200A. This makes it suitable for high current applications such as battery-charging or motor control. It is also suitable for voltage-controlled applications such as lighting control, solar photovoltaic, and voltage regulators.
The IRFS7537PBF can also be used as an amplifier in audio applications. It is capable of providing good output power with low distortion and a good signal-to-noise ratio. This makes it a suitable choice for audio amplifiers and sound systems. It can also be used for linear power supplies and high voltage generation. This power transistor is capable of handling high voltages up to 300V.
The IRFS7537PBF is a vertical DMOS power transistor. This type of power transistor is based on a vertical power metal–oxide–semiconductor field-effect transistor (MOSFET) structure. It has two metal layers that form the source and drain regions. The gate of the transistor is connected to the vertical layer via a gate oxide. This layer helps to control the flow of current between the source and the drain.
The working principle of the IRFS7537PBF transistor is based on the transfer of electrons between the source and the drain. The application of external voltage to the gate causes the current to be transferred from the source to the drain. This causes the voltage at the drain to decrease, resulting in an increase in the current that flows through the transistor. The voltage at the gate determines the amount of current that will flow through the device.
The IRFS7537PBF transistor is capable of handling large current magnitude and is suitable for applications that require high power switching. It is also capable of providing good electrical characteristics with low distortion, making it suitable for audio amplifiers and sound systems. This power transistor is also suitable for voltage-controlled applications such as lighting control, solar photovoltaic, and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
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