NTK3134NT1H Allicdata Electronics
Allicdata Part #:

NTK3134NT1H-ND

Manufacturer Part#:

NTK3134NT1H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 0.89A SOT723
More Detail: MOSFET N-CH 20V 0.89A SOT723
DataSheet: NTK3134NT1H datasheetNTK3134NT1H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): ±6V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-723
Package / Case: SOT-723
Description

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Overview

The NTK3134NT1H is a Silicon N-Channel Enhancement Mode Field Effect Transistor (FET) with a low drain-source on resistance of 10.5 Ohms, ideal for use in switching and linear applications. It features a maximum drain current of 3A and a drain-source voltage of 60V. The NTK3134NT1H also features protected gate oxide, a low gate threshold voltage, and low thermal resistance. With its high performance and wide range of features, the NTK3134NT1H is well suited for a variety of industrial, consumer, and automotive applications.

Application Fields

The NTK3134NT1H can be used in a variety of industrial, consumer, and automotive applications, such as motor control, industrial lighting, HVAC systems, power conversion and distribution systems, digital power management, and automotive electronics. In addition, the NTK3134NT1H is also suitable for use in power switching and amplifier circuits. Furthermore, its low thermal resistance makes it an ideal choice for use in high-power applications.

Working Principle

The NTK3134NT1H is a N-channel enhancement mode FET, which uses electrical field for the conduction of electrons. An electric field is generated between the source and the drain of the FET when a positive voltage is applied to the gate terminal with respect to the source terminal. The electric field switches the FET between on and off states, allowing it to be used as an electrically controllable switch in a circuit.When the FET is in the off state, the resistance between source and drain is extremely high, preventing the flow of current. When the voltage applied to the gate terminal reaches a certain level, which is known as the threshold voltage, the electric field is turned on and a low resistance path for current is created between source and drain, allowing current to flow. The electric field is proportional to the applied voltage, so increasing the voltage at the gate terminal will increase the conduction current.

Conclusion

The NTK3134NT1H is a high-performance Silicon N-Channel Enhancement Mode Field Effect Transistor with a low drain-source on resistance of 10.5 Ohms and a maximum drain current of 3A. It is suitable for use in a variety of industrial, consumer, and automotive applications. It is also suitable for use in power switching and amplifier circuits. Its low thermal resistance makes it an ideal choice for use in high-power applications. The NTK3134NT1H works by using an electric field, generated by a voltage applied to the gate terminal with respect to the source terminal. This electric field switches the device between on and off states to control the flow of current, making it an ideal choice for use as an electrically controllable switch in circuits.

The specific data is subject to PDF, and the above content is for reference

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