IRFS7734-7PPBF

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The IRFS7734-7PPBF is part of Infineon\'s HEXFET series of power MOSFETs, featuring a logic-level gate threshold voltage, low gate charge, and low on-resistance. The IRFS7734-7PPBF is a single n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) packaged in a space-saving PowerPAIR 4x4 dual-in-line package (DIP) for applications in power switching, motor control, and voltage regulators. In this article, we’ll look at the IRFS7734-7PPBF’s application field and working principle.

Features of the IRFS7734-7PPBF

The IRFS7734-7PPBF has the following features:

• Logic-level gate threshold
• Low on-resistance
• Low gate charge
• High-voltage drain-to-source breakdown voltage (100V)
• Low total gate charge

Application Field of the IRFS7734-7PPBF

The IRFS7734-7PPBF is suitable for applications in reverse voltage protection, DC/DC and AC/DC switching, motor control, voltage regulation, automotive and telecommunications. Additionally, it is well suited for power converters, power switches, switching regulators, and motor controllers.

The Working Principle of the IRFS7734-7PPBF

The IRFS7734-7PPBF is a MOSFET which operates by modulating a voltage applied to its gate relative to its source terminal. The gate-source voltage (VGS) modulates the conductivity of the drain-source channel by controlling the number of charge carriers in the channel. The lower the VGS, the more electrons will be discharged, resulting in a decrease in drain current. Conversely, a higher VGS will increase the number of electrons and result in an increase in drain current.

The IRFS7734-7PPBF has a breakdown voltage (BV) of 100V and a Drain-Source on-resistance (RDSon) of 18 mΩ. When the gate-source voltage is at least 4V, the FET will start conducting and the drain-source will be in its low-resistance state. This transistor can be used either in depletion mode (when VGS is negative) or enhancement mode (when VGS is positive). In depletion mode, the transistor acts as an open, preventing current flow between drain and source. In enhancement mode, the transistor acts as a low-resistance between drain and source.

The IRFS7734-7PPBF is designed to handle high current and drain voltages, meaning it can be used in high-power applications. Its low on-state resistance, low gate charge, and logic-level gate threshold make it an ideal choice for those applications requiring high efficiency and fast switching speeds. Additionally, its 4x4 dual-in-line package (DIP) makes it easy to design into a PCB and ideal for use in space constrained systems.

Conclusion

The IRFS7734-7PPBF is a single n-channel MOSFET from Infineon\'s HEXFET series of power MOSFETs. Its features include a logic-level gate threshold, low gate charge, low on-resistance, and high-voltage drain-to-source breakdown voltage. It is suitable for applications in reverse voltage protection, DC/DC and AC/DC switching, motor control, voltage regulation, automotive, and telecommunications. Its low on-state resistance, low gate charge, and logic-level gate threshold make it an ideal choice for those applications requiring high efficiency and fast switching speeds.

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